No. |
Part Name |
Description |
Manufacturer |
121 |
MAX6729KATZD3-T |
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
122 |
MAX6731UTTD3-T |
Vcc1: 3.075 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
123 |
MAX6732UTLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
124 |
MAX6732UTTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
125 |
MAX6733UTLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
126 |
MAX6733UTTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
127 |
MAX6734KALTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
128 |
MAX6734KATGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
129 |
MAX6735KALTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
130 |
MAX6735KATGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
131 |
MAX6736XKLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
132 |
MAX6736XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
133 |
MAX6736XKTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
134 |
MAX6736XKTID3-T |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
135 |
MAX6736XKTWD3-T |
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
136 |
MAX6736XKTZD3-T |
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
137 |
MAX6736XKWTD3-T |
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
138 |
MAX6737XKLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
139 |
MAX6737XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
140 |
MAX6737XKTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
141 |
MAX6737XKTID3-T |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
142 |
MAX6737XKTWD3-T |
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
143 |
MAX6737XKTZD3-T |
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
144 |
MAX6737XKWTD3-T |
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
145 |
MAX6738XKTD3-T |
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
146 |
MAX6739XKTD3-T |
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
147 |
MAX6740XKLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
148 |
MAX6740XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
149 |
MAX6740XKTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
150 |
MAX6740XKTID3-T |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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