| No. |
Part Name |
Description |
Manufacturer |
| 121 |
NX8567SAM541-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1554.134 nm. Frequency 192.90 THz. FC-UPC connector. |
NEC |
| 122 |
NX8567SAM541-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1554.134 nm. Frequency 192.90 THz. SC-UPC connector. |
NEC |
| 123 |
NX8567SAS541-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1554.134 nm. Frequency 192.90 THz. FC-UPC connector. |
NEC |
| 124 |
NX8567SAS541-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1554.134 nm. Frequency 192.90 THz. SC-UPC connector. |
NEC |
| 125 |
NX8570SC541-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1554.134 nm. Frequency 192.90 THz. FC-PC connector. |
NEC |
| 126 |
NX8570SC541-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1554.134 nm. Frequency 192.90 THz. SC-PC connector. |
NEC |
| 127 |
NX8571SC541-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1554.134 nm. Frequency 192.90 THz. FC-PC connector. |
NEC |
| 128 |
NX8571SC541-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1554.134 nm. Frequency 192.90 THz. SC-PC connector. |
NEC |
| 129 |
RF1K49092 |
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features 3.5A, 12V (N-Channel) |
Fairchild Semiconductor |
| 130 |
RF1K49092 |
3.5A/2.5A/ 12V/ 0.050/0.130 Ohm/ Logic Level/ Complementary LittleFET Power MOSFET |
Intersil |
| 131 |
RF1K49093 |
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET |
Fairchild Semiconductor |
| 132 |
RF1K49093 |
2.5A/ 12V/ 0.130 Ohm/ Logic Level/ Dual P-Channel LittleFET Power MOSFET |
Intersil |
| 133 |
RF1K49154 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET |
Fairchild Semiconductor |
| 134 |
RF1K49154 |
2A/ 60V/ 0.130 Ohm/ Dual N-Channel/ LittleFET Power MOSFET |
Intersil |
| 135 |
RF1K49221 |
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET |
Fairchild Semiconductor |
| 136 |
RF1K49221 |
2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET |
Intersil |
| 137 |
RFD12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 138 |
RFD12N06RLESM |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 139 |
RFP12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 140 |
SDA676-48 |
4800 V, 0.135 A high voltage, fast recovery single phase bridge |
Solid State Devices Inc |
| 141 |
SPB18P06PSMD |
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.13 |
Infineon |
| 142 |
SPD18P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.13 |
Infineon |
| 143 |
SPP18P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.13 |
Infineon |
| 144 |
SPU18P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.13 |
Infineon |
| 145 |
STB22NS25Z |
N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFET |
ST Microelectronics |
| 146 |
STB22NS25ZT4 |
N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFET |
ST Microelectronics |
| 147 |
STB25NM60ND |
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 148 |
STB26NM60N |
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 149 |
STB27NM60ND |
N-channel 600 V, 0.13 Ohm, 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK |
ST Microelectronics |
| 150 |
STB28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in D2PAK package |
ST Microelectronics |
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