| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N6269C |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 122 |
1N6269CA |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 123 |
1N6675 |
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 124 |
1N6676 |
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 125 |
1N6677 |
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 126 |
1N6677UR-1 |
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Microsemi |
| 127 |
1N753 |
6.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 128 |
1N753 |
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 129 |
1N753 |
400mW, 6.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 130 |
1N753A |
6.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 131 |
1N753A |
500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 132 |
1N753A-1 |
6.2 V, 400 mW silicon zener diode |
BKC International Electronics |
| 133 |
1N753B |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 134 |
1N753C |
500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 135 |
1N753C |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 136 |
1N753D |
500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 137 |
1N753D |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 138 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 139 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 140 |
1N756 |
400mW, 8.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 141 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 142 |
1N756A |
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 143 |
1N756A-1 |
8.2 V, 400 mW silicon zener diode |
BKC International Electronics |
| 144 |
1N756B |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 145 |
1N756C |
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 146 |
1N756C |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 147 |
1N756D |
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 148 |
1N756D |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 149 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 150 |
1N821-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
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