No. |
Part Name |
Description |
Manufacturer |
121 |
ARD65105 |
26.5GHz, 18GHz COAXIAL SWITCH |
Matsushita Electric Works(Nais) |
122 |
ARD65105Q |
26.5GHz, 18GHz COAXIAL SWITCH |
Matsushita Electric Works(Nais) |
123 |
ARD65112 |
26.5GHz, 18GHz COAXIAL SWITCH |
Matsushita Electric Works(Nais) |
124 |
ARD65112Q |
26.5GHz, 18GHz COAXIAL SWITCH |
Matsushita Electric Works(Nais) |
125 |
ARD65124 |
26.5GHz, 18GHz COAXIAL SWITCH |
Matsushita Electric Works(Nais) |
126 |
ARD65124Q |
26.5GHz, 18GHz COAXIAL SWITCH |
Matsushita Electric Works(Nais) |
127 |
AT73C202 |
The AT73C202 is a low-cost, ultra low-power, power and battery management IC designed to interface directly with state-of-the-art cellular phones, for example with 2.5G GSM phones. It includes all required power supplies tailored to be ful |
Atmel |
128 |
BB833 |
Varactordiodes - Silicon tuning diode with extended frequency range up to 2.5GHz |
Infineon |
129 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
130 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
131 |
BFR96 |
NPN silicon high frequency transistor fT=4.5GHz 50mA |
Motorola |
132 |
BFRC96 |
NPN silicon high frequency transistor fT=4.5GHz 50mA |
Motorola |
133 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
134 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
135 |
BFW92A |
NPN silicon high frequency transistor fT=4.5GHz 10mA |
Motorola |
136 |
BGA428 |
Silicon MMICs - 19dB LNA, 1.4...2.5GHz, NF=1.4dB, 50Ohm, SOT363 |
Infineon |
137 |
BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343 |
Infineon |
138 |
BGA614 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343 |
Infineon |
139 |
BGA616 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 18dBm, SOT343 |
Infineon |
140 |
CA3227 |
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz |
Intersil |
141 |
CA3227E |
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz |
Intersil |
142 |
CA3227M |
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz |
Intersil |
143 |
CA3227M96 |
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz |
Intersil |
144 |
CHA2192 |
24-26.5GHz Low Noise Amplifier |
United Monolithic Semiconductors |
145 |
CHA2192-99F/00 |
24-26.5GHz Low Noise Amplifier |
United Monolithic Semiconductors |
146 |
CHA2293 |
24.5-29.5GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
147 |
CHA2293-99F/00 |
24.5-29.5GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
148 |
CHA5295 |
24.5-26.5GHz High Power Amplifier |
United Monolithic Semiconductors |
149 |
CHA5295-99F/00 |
24.5-26.5GHz High Power Amplifier |
United Monolithic Semiconductors |
150 |
CXG1014N |
1.5GHz Low Noise Amplifier/Down Conversion Mixer |
SONY |
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