No. |
Part Name |
Description |
Manufacturer |
121 |
ACM4002E-RLYS-T |
2.7-5.5V; 40characters x 2lines; dot size:0.60x0.65mm; dot pitch:0.65x0.70mm; liquid crystal display |
AZ Displays |
122 |
ACM4002E-RLYW-T |
2.7-5.5V; 40characters x 2lines; dot size:0.60x0.65mm; dot pitch:0.65x0.70mm; liquid crystal display |
AZ Displays |
123 |
AS91L1002E-10L100-CF |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
124 |
AS91L1002E-10L100-CG |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
125 |
AS91L1002E-10L100-I |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
126 |
AS91L1002E-10L100-IF |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
127 |
AS91L1002E-10L100-IG |
3 to 3.6 V, 10 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
128 |
AS91L1002E-40L100-CF |
3 to 3.6 V, 40 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
129 |
AS91L1002E-40L100-CG |
3 to 3.6 V, 40 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
130 |
AS91L1002E-40L100-I |
3 to 3.6 V, 40 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
131 |
AS91L1002E-40L100-IF |
3 to 3.6 V, 40 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
132 |
AS91L1002E-40L100-IG |
3 to 3.6 V, 40 MHz TCK, JTAG test sequencer |
Alliance Semiconductor |
133 |
KM684002E-17 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
134 |
KM684002E-20 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
135 |
KM684002E-25 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
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