No. |
Part Name |
Description |
Manufacturer |
121 |
Q62702-F1685 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
122 |
Q62702-F1771 |
Silicon N Channel MOSFET Tetrode |
Siemens |
123 |
Q62702-F1772 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
124 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
125 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
126 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
127 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
128 |
Q62702-F1794 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
129 |
Q62702-F182 |
N-Channel junction field-Effect Transistors |
Siemens |
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