| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BQ296107DSGT |
2-4S Overvoltage Protector with LDO Output 8-WSON -40 to 110 |
Texas Instruments |
| 122 |
BQ29707DSER |
Li-Ion/Li Polymer Advanced Single-Cell Battery Protector IC Family 6-WSON -40 to 85 |
Texas Instruments |
| 123 |
BQ29707DSET |
Li-Ion/Li Polymer Advanced Single-Cell Battery Protector IC Family 6-WSON -40 to 85 |
Texas Instruments |
| 124 |
BQ7693007DBT |
6 to 10-Series Cell Li-Ion and Li-Phosphate Battery Monitor (bq76940 Family) 30-TSSOP -40 to 85 |
Texas Instruments |
| 125 |
BQ7693007DBTR |
6 to 10-Series Cell Li-Ion and Li-Phosphate Battery Monitor (bq76940 Family) 30-TSSOP -40 to 85 |
Texas Instruments |
| 126 |
BQ771807DPJR |
Family 2-5S Overvoltage Protector with Internal Delay Timer 8-WSON -40 to 85 |
Texas Instruments |
| 127 |
BQ771807DPJT |
Family 2-5S Overvoltage Protector with Internal Delay Timer 8-WSON -40 to 85 |
Texas Instruments |
| 128 |
BU1507DX |
Silicon Diffused Power Transistor |
Philips |
| 129 |
BU2507DF |
Silicon Diffused Power Transistor |
Philips |
| 130 |
BU2507DX |
Silicon Diffused Power Transistor |
Philips |
| 131 |
BU407D |
NPN POWER TRANSISTOR |
Boca Semiconductor Corporation |
| 132 |
BU407D |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 133 |
BU407D |
POWER TRANSISTORS(7A,150-200V,60W) |
MOSPEC Semiconductor |
| 134 |
BU407D |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 135 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 136 |
BU407D |
High voltage transistor for switching applications |
SGS-ATES |
| 137 |
BU407D |
Silicon NPN triple diffused high voltage transistor |
TOSHIBA |
| 138 |
BU4507DF |
Silicon Diffused Power Transistor |
Philips |
| 139 |
BU4507DX |
Silicon Diffused Power Transistor |
Philips |
| 140 |
BU4507DZ |
Silicon Diffused Power Transistor |
Philips |
| 141 |
BU607D |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
| 142 |
BU607D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 143 |
BU607D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 144 |
BU607D |
High voltage transistor for switching applications |
SGS-ATES |
| 145 |
BUP307D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 146 |
BUR607D |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
| 147 |
BUR607D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 148 |
BUZ907D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
Magnatec |
| 149 |
BUZ907DP |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
Magnatec |
| 150 |
CDS1N6007DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| | | |
