No. |
Part Name |
Description |
Manufacturer |
121 |
IS42S32400A-10TI |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
122 |
IS42S32400A-10TL |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
123 |
IS42S32400A-10TLI |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
124 |
IS42S81600A-10T |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
125 |
IS42S81600A-10TI |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
126 |
IS42S81600A-10TL |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
127 |
KMM594000A-10 |
4M x 9 CMOS SIMM Memory Module |
Samsung Electronic |
128 |
M3P100A-100 |
High Power Standard Recovery Rectifiers - Three Phase Devices |
America Semiconductor |
129 |
M8810A-100 |
α DETECTOR |
TOSHIBA |
130 |
MAC800A-10 |
100V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
131 |
MACH210A-10 |
High-Density EE CMOS Programmable Logic |
Advanced Micro Devices |
132 |
MACH210A-10JC |
High-density EE CMOS programmable logic, 10ns, input pull-up resistors |
Advanced Micro Devices |
133 |
MACH210A-10JC |
High-Density EE CMOS Programmable Logic |
Lattice Semiconductor |
134 |
MACH210A-10VC |
High-density EE CMOS programmable logic, 10ns, input pull-up resistors |
Advanced Micro Devices |
135 |
MACH210A-10VC |
High-Density EE CMOS Programmable Logic |
Lattice Semiconductor |
136 |
MB90V340A-101 |
16-bit Proprietary Microcontroller |
Fujitsu Microelectronics |
137 |
MB90V340A-102 |
16-bit Proprietary Microcontroller |
Fujitsu Microelectronics |
138 |
MD56V62800A-10TA |
4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM |
OKI electronic components |
139 |
MSM514800A-10 |
524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
OKI electronic componets |
140 |
MSM514800A-10JS |
524,288-word x 8-bit dynamic RAM |
OKI electronic components |
141 |
MSM514800A-10TS-K |
524,288-word x 8-bit dynamic RAM |
OKI electronic components |
142 |
MX29F1610A-10 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
143 |
PCN10A-100P-2.54DS |
Product Compliant to DIN41612/IEC603-2 Standard |
Hirose Electric |
144 |
PE150A-10F |
CERMAX FOCUSED XENON ARC LAMPS |
PerkinElmer Optoelectronics |
145 |
PEEL22CV10A-10 |
CMOS Programmable Electrically Erasable Logic Device |
etc |
146 |
SST28SF040A-10-4C-WH |
4 Mbit (512K x 8) super-flash EEPROM |
Silicon Storage Technology |
147 |
SST28VF040A-10-4I-EH |
4 Mbit (512K x 8) super-flash EEPROM |
Silicon Storage Technology |
148 |
TMS27C010A-10JL |
1 048 576-Bit Programmable Read-Only Memory 32-CDIP 0 to 70 |
Texas Instruments |
149 |
TMS27C210A-10JL |
1 048 576-Bit Programmable Read-Only Memory 40-CDIP |
Texas Instruments |
150 |
TMS27PC010A-10FML |
1 048 576-Bit Programmable Read-Only Memory |
Texas Instruments |
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