| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AMD29F010B-120EI |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 122 |
AMD29F010B-120FC |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 123 |
AMD29F010B-120FE |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 124 |
AMD29F010B-120FI |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 125 |
AMD29F010B-120JC |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 126 |
AMD29F010B-120JE |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 127 |
AMD29F010B-120JI |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 128 |
AMD29F010B-120PC |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 129 |
AMD29F010B-120PE |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 130 |
AMD29F010B-120PI |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
Advanced Micro Devices |
| 131 |
AMS3100B-12 |
MICROPOWER VOLTAGE REFERENCE |
Advanced Monolithic Systems |
| 132 |
AS29F200B-120SC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns |
Alliance Semiconductor |
| 133 |
AS29F200B-120SI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns |
Alliance Semiconductor |
| 134 |
AS29F200B-120TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns |
Alliance Semiconductor |
| 135 |
AS29F200B-120TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns |
Alliance Semiconductor |
| 136 |
AS29LV400B-120SC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 137 |
AS29LV400B-120SI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 138 |
AS29LV400B-120TC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 139 |
AS29LV400B-120TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 140 |
AS29LV800B-120SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 141 |
AS29LV800B-120SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 142 |
AS29LV800B-120TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 143 |
AS29LV800B-120TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 144 |
ATV2500B-12JC |
High-Speed High-Density UV Erasable Programmable Logic Device |
Atmel |
| 145 |
ATV2500B-12KC |
High-Speed High-Density UV Erasable Programmable Logic Device |
Atmel |
| 146 |
CY7C1020B-12VC |
Memory : Async SRAMs |
Cypress |
| 147 |
CY7C1020B-12ZC |
Memory : Async SRAMs |
Cypress |
| 148 |
EN27LV020B-120 |
2Megabit Low Voltage EPROM (256K x 8) |
Eon Silicon Solution |
| 149 |
GFF-90B-12 |
Gate Turn-off Thyristors |
Hitachi Semiconductor |
| 150 |
M295V200B-120M1R |
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
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