| No. |
Part Name |
Description |
Manufacturer |
| 121 |
M87C257-60F7TR |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 122 |
M87C257-60F7X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 123 |
M87C257-70F7TR |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 124 |
M87C257-70F7X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 125 |
M87C257-80F7TR |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 126 |
M87C257-80F7X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 127 |
M87C257-90F7TR |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 128 |
M87C257-90F7X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 129 |
RTP315N10F7 |
Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 130 |
S3C80F7 |
8-Bit Single-Chip CMOS Microcontrollers |
Samsung Electronic |
| 131 |
S3P80F7 |
|
Samsung Electronic |
| 132 |
S3P80F7 |
|
Samsung Electronic |
| 133 |
S3P80F7 |
|
Samsung Electronic |
| 134 |
S3P80F9 |
S3C80F7/C80F9/C80G7/C80G9 User's Manual |
Samsung Electronic |
| 135 |
S3P80F9 |
S3C80F7/C80F9/C80G7/C80G9 Data Sheet |
Samsung Electronic |
| 136 |
STB100N10F7 |
N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in D2PAK package |
ST Microelectronics |
| 137 |
STD100N10F7 |
N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in DPAK package |
ST Microelectronics |
| 138 |
STD25N10F7 |
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 139 |
STD30N10F7 |
N-channel 100 V, 0.02 Ohm typ., 35 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 140 |
STD45N10F7 |
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 141 |
STD80N10F7 |
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 142 |
STF100N10F7 |
N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220FP package |
ST Microelectronics |
| 143 |
STF110N10F7 |
N-channel 100 V, 5.1 mOhm typ., 45 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220FP package |
ST Microelectronics |
| 144 |
STF150N10F7 |
N-channel 100 V, 0.0036 Ohm typ., 65 A STripFET F7 Power MOSFET in a TO-220FP package |
ST Microelectronics |
| 145 |
STF25N10F7 |
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 146 |
STF30N10F7 |
N-channel 100 V, 0.02 Ohm typ., 35 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 147 |
STF45N10F7 |
N-channel 100 V, 0.0145 Ohm typ., 30 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 148 |
STF80N10F7 |
N-channel 100 V, 0.0085 Ohm typ., 40 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 149 |
STH110N10F7-2 |
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 150 |
STH110N10F7-6 |
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| | | |
