| No. |
Part Name |
Description |
Manufacturer |
| 121 |
CM400HA-28H |
Single IGBTMOD 400 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 122 |
CM400HA-34H |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 123 |
CM400HA-34H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 124 |
CM400HA-34H |
Single IGBTMOD 400 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 125 |
CM450HA-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 126 |
CM450HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 127 |
CM450HA-5F |
Trench Gate Design Single IGBTMOD�� 450 Amperes/250 Volts |
Powerex Power Semiconductors |
| 128 |
CM600HA-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 129 |
CM600HA-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 130 |
CM600HA-12H |
Single IGBTMOD 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 131 |
CM600HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 132 |
CM600HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 133 |
CM600HA-24H |
Single IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 134 |
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 135 |
CM600HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 136 |
CM600HA-28H |
Single IGBTMOD 600 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 137 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 138 |
CM600HA-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 139 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
| 140 |
CM600HA24H |
Single IGBTMOD H-Series Module 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 141 |
CM800HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 142 |
CM800HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 143 |
CM800HA-24H |
Single IGBTMOD 800 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 144 |
CM800HA-28H |
Single IGBTMOD 800 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 145 |
CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 146 |
CM800HA-34H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 147 |
CM800HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 148 |
CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 149 |
EC30HA04 |
Schottky Barrier Diode |
Nihon |
| 150 |
EV200HAABA |
Make & Break Load Switching |
etc |
| | | |
