No. |
Part Name |
Description |
Manufacturer |
121 |
PMZ950UPE |
20 V, P-channel Trench MOSFET |
Nexperia |
122 |
PMZ950UPE |
20 V, P-channel Trench MOSFET |
NXP Semiconductors |
123 |
PMZ950UPEL |
20 V, P-channel Trench MOSFET |
Nexperia |
124 |
PMZB1200UPE |
30 V, P-channel Trench MOSFET |
Nexperia |
125 |
PMZB320UPE |
30 V, P-channel Trench MOSFET |
Nexperia |
126 |
PMZB350UPE |
20 V, single P-channel Trench MOSFET |
Nexperia |
127 |
PMZB350UPE |
20 V, single P-channel Trench MOSFET |
NXP Semiconductors |
128 |
PMZB670UPE |
20 V, single P-channel Trench MOSFET |
Nexperia |
129 |
PMZB670UPE |
20 V, single P-channel Trench MOSFET |
NXP Semiconductors |
130 |
PMZB950UPE |
20 V, P-channel Trench MOSFET |
Nexperia |
131 |
PMZB950UPEL |
20 V, P-channel Trench MOSFET |
Nexperia |
132 |
UT28F256T-40UPA |
Radiation-Hardened 32K x 8 PROM |
Aeroflex Circuit Technology |
133 |
UT28F256T-40UPC |
Radiation-Hardened 32K x 8 PROM |
Aeroflex Circuit Technology |
134 |
UT28F256T-40UPX |
Radiation-Hardened 32K x 8 PROM |
Aeroflex Circuit Technology |
135 |
UT8Q512-20UPC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
136 |
UT9Q512-20UPC |
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
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