No. |
Part Name |
Description |
Manufacturer |
121 |
MK4027-3 |
4096 X 1 BIT DYNAMIC RAM |
etc |
122 |
MK4027J-2 |
4096 X 1 BIT DYNAMIC RAM |
etc |
123 |
MK4027J-3 |
4096 X 1 BIT DYNAMIC RAM |
etc |
124 |
MK4027N-2 |
4096 X 1 BIT DYNAMIC RAM |
etc |
125 |
MK4027N-3 |
4096 X 1 BIT DYNAMIC RAM |
etc |
126 |
MK4116 |
16,384 X 1 BIT DYNAMIC RAM |
etc |
127 |
MK4116P-2 |
16,384 X 1 BIT DYNAMIC RAM |
etc |
128 |
MK4116P-3 |
16,384 X 1 BIT DYNAMIC RAM |
etc |
129 |
MMC4500 |
1 BIT industrial control unit |
Microelectronica |
130 |
MMC4500E |
1 BIT industrial control unit |
Microelectronica |
131 |
MMC4500F |
1 BIT industrial control unit |
Microelectronica |
132 |
MMC4500G |
1 BIT industrial control unit |
Microelectronica |
133 |
MMC4500H |
1 BIT industrial control unit |
Microelectronica |
134 |
MMN4164 |
65536x1 bit dynamic RAM |
Microelectronica |
135 |
NLSV1T244 |
1 Bit Configurable Dual Supply Voltage Level Translator |
ON Semiconductor |
136 |
NM100500 |
ECL I/O 256k BiCMOS SRAM 262,144 x 1 bit |
National Semiconductor |
137 |
NM5100 |
ECL I/O 256k BiCMOS SRAM 262,144 x 1 bit |
National Semiconductor |
138 |
SD12CT1 |
SD12CT1 Bi-Directional TVS diodes in SOD-323 |
ON Semiconductor |
139 |
TC5141001 |
4,194,304 WORD x 1 BIT DYNAMIC RAM |
TOSHIBA |
140 |
TC514100J-10 |
4,194,304 WORD X 1 BIT DYNAMIC RAM |
etc |
141 |
TC514100J-80 |
4,194,304 WORD X 1 BIT DYNAMIC RAM |
etc |
142 |
TC514100J/Z-10 |
4,194,304 WORD x 1 BIT DYNAMIC RAM |
TOSHIBA |
143 |
TC514100J/Z-80 |
4,194,304 WORD x 1 BIT DYNAMIC RAM |
TOSHIBA |
144 |
TC514100JL |
4,194,304 WORD x 1 BIT DYNAMIT RAM |
TOSHIBA |
145 |
TC514100JL-10 |
4,194,304 WORD x 1 BIT DYNAMIT RAM |
TOSHIBA |
146 |
TC514100JL-80 |
4,194,304 WORD x 1 BIT DYNAMIT RAM |
TOSHIBA |
147 |
TC514100Z-10 |
4,194,304 WORD X 1 BIT DYNAMIC RAM |
etc |
148 |
TC514100Z-80 |
4,194,304 WORD X 1 BIT DYNAMIC RAM |
etc |
149 |
TC514100ZL-10 |
4,194,304 WORD x 1 BIT DYNAMIT RAM |
TOSHIBA |
150 |
TC514100ZL-80 |
4,194,304 WORD x 1 BIT DYNAMIT RAM |
TOSHIBA |
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