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Datasheets for 1.11

Datasheets found :: 163
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
121 MAX6736XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
122 MAX6737XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
123 MAX6737XKWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
124 MAX6737XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
125 MAX6740XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
126 MAX6740XKWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
127 MAX6740XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
128 MAX6741XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
129 MAX6741XKWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
130 MAX6741XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
131 MAX6743XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
132 MAX6743XKWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
133 MAX6743XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
134 MAX6744XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
135 MAX6744XKWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
136 MAX6744XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
137 NX8560LJ311-BC EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. FC-UPC connector. NEC
138 NX8560LJ311-CC EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. SC-UPC connector. NEC
139 NX8560SJ311-BC EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1531.116 nm. Frequency 195.80 THz. FC-UPC connector. NEC
140 NX8560SJ311-CC EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1531.116 nm. Frequency 195.80 THz. SC-UPC connector. NEC
141 NX8562LB311-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. Anode ground. FC-PC connector. NEC
142 NX8562LF311-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. Anode floating. FC-PC connector. NEC
143 NX8563LA311-CC Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. SC-UPC. NEC
144 NX8563LA311-CD Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. SC-APC. NEC
145 NX8563LAS311-CC Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. SC-UPC. NEC
146 NX8563LAS311-CD Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. SC-APC. NEC
147 NX8563LB311-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. FC-PC connector. Anode ground. NEC
148 NX8563LF311-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. FC-PC connector. Anode floating. NEC
149 NX8564LE311-BC EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. FC-UPC connector. NEC
150 NX8564LE311-CC EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. SC-UPC connector. NEC


Datasheets found :: 163
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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