No. |
Part Name |
Description |
Manufacturer |
121 |
2N5109 |
Chip Type 2C5109 Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
122 |
2N5109 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
123 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
124 |
2N5109 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
125 |
2N5109 |
RF Power transistor |
Texas Instruments |
126 |
2N5109 |
RF transistor |
Texas Instruments |
127 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
128 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
129 |
2N5109UB |
Chip Type 2C5109 Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
130 |
2N5109UB |
Chip Type 2C5109 Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
131 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
132 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
133 |
2N6109 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
134 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
135 |
2N6109 |
PNP power transistor |
FERRANTI |
136 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
137 |
2N6109 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
138 |
2N6109 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
139 |
2N6109 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
140 |
2N6109 |
Power 7A 50V Discrete PNP |
ON Semiconductor |
141 |
2N6109 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
142 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
143 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
144 |
2N7109 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
145 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
146 |
2SA1093 |
Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1 |
New Jersey Semiconductor |
147 |
2SA1093 |
Silicon PNP Power Transistors TO-3P(I) package |
Savantic |
148 |
2SA1093 |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
149 |
2SA1094 |
Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1 |
New Jersey Semiconductor |
150 |
2SA1094 |
Silicon PNP Power Transistors MT-200 package |
Savantic |
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