| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MAX1107CUB+ |
Single-Supply, Low-Power, Serial 8-Bit ADCs |
MAXIM - Dallas Semiconductor |
| 122 |
MAX1107CUB+T |
Single-Supply, Low-Power, Serial 8-Bit ADCs |
MAXIM - Dallas Semiconductor |
| 123 |
MAX1107EUB |
Single-Supply / Low-Power / Serial 8-Bit ADCs |
MAXIM - Dallas Semiconductor |
| 124 |
MAX1107EUB+ |
Single-Supply, Low-Power, Serial 8-Bit ADCs |
MAXIM - Dallas Semiconductor |
| 125 |
MB91107 |
32-bit RISC Microcontroller |
Fujitsu Microelectronics |
| 126 |
MB91107PFV |
32-bit RISC Microcontroller |
Fujitsu Microelectronics |
| 127 |
MMAD1107 |
Diode Array |
Microsemi |
| 128 |
NJG1107HB3 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 129 |
NJG1107KB2 |
1.5/1.9GHz BAND LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 130 |
NJG1107KB2-C1 |
1.5/1.9GHz LNA GaAs MMIC |
New Japan Radio |
| 131 |
NJG1107KB2-C2 |
1.5/1.9GHz LNA GaAs MMIC |
New Japan Radio |
| 132 |
NJG1107KB2-C3 |
1.5/1.9GHz LNA GaAs MMIC |
New Japan Radio |
| 133 |
NJG1107KB2-L1 |
1.5/1.9GHz LNA GaAs MMIC |
New Japan Radio |
| 134 |
NJG1107KB2-L2 |
1.5/1.9GHz LNA GaAs MMIC |
New Japan Radio |
| 135 |
NJG1107KB2-L3 |
1.5/1.9GHz LNA GaAs MMIC |
New Japan Radio |
| 136 |
NJG1107KB2-L4 |
1.5/1.9GHz LNA GaAs MMIC |
New Japan Radio |
| 137 |
NJG1107KB2-R1 |
1.5/1.9GHz LNA GaAs MMIC |
New Japan Radio |
| 138 |
NJW1107 |
Dolby Pro Logic Surround Decoder with Discrete 5.1ch Input |
New Japan Radio |
| 139 |
NJW1107A |
Dolby Pro Logic Surround Decoder with Discrete 5.1ch Input |
New Japan Radio |
| 140 |
NJW1107FC3 |
Dolby Pro Logic Surround Decoder with Discrete 5.1ch Input |
New Japan Radio |
| 141 |
NX3P1107UK |
Logic controlled high-side power switch |
NXP Semiconductors |
| 142 |
PMMAD1107 |
Steering diode (rail clamp) array |
Protek Devices |
| 143 |
PWR1107 |
1.5 WATT UNREGULATED DUAL-IN-LINE DC/DC CONVERTER |
C&D Technologies |
| 144 |
Q62702-D1107 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
| 145 |
Q62702-D1107 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
| 146 |
R5110710 |
General Purpose Rectifier (100-150 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 147 |
R5110715 |
General Purpose Rectifier (100-150 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 148 |
RN1107 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 149 |
RN1107ACT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 150 |
RN1107CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| | | |
