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Datasheets for 160

Datasheets found :: 858
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No. Part Name Description Manufacturer
121 2EZ160 160 V, 0.5 A, 2 W, glass passivated junction silicon zener diode TRSYS
122 2N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
123 2N3440 1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
124 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
125 2N5551HRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
126 2N5551HRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
127 2N5551RHRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
128 2N5551RHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
129 2N5551RUBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
130 2N5551RUBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
131 2N5551SHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
132 2N5551UB1 Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
133 2N5551UBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
134 2N5551UBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
135 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
136 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
137 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
138 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
139 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
140 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
141 3.0SMCJ160A 160 V, 1 mA, 3000 W, surface mount transient voltage suppressor Surge Components
142 3EZ160 160 V, 3 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
143 3EZ160D 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-20% tolerance. Jinan Gude Electronic Device
144 3EZ160D1 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-1% tolerance. Jinan Gude Electronic Device
145 3EZ160D1 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance. Motorola
146 3EZ160D10 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-10% tolerance. Jinan Gude Electronic Device
147 3EZ160D10 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 10% tolerance. Motorola
148 3EZ160D2 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-2% tolerance. Jinan Gude Electronic Device
149 3EZ160D2 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance. Motorola
150 3EZ160D3 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-3% tolerance. Jinan Gude Electronic Device


Datasheets found :: 858
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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