No. |
Part Name |
Description |
Manufacturer |
121 |
2SA1679 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
122 |
2SB1167 |
PNP Epitaxial Planar Silicon Transistors 100V/3A Switching Applications |
SANYO |
123 |
2SB1678 |
For low-frequency amplification |
Panasonic |
124 |
2SB1679 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
125 |
2SB1679G |
Silicon PNP epitaxial planar type |
Panasonic |
126 |
2SC1167 |
Audio Frequency Transistor |
TOSHIBA |
127 |
2SC1167 |
Silicon NPN triple diffused MESA power transistor, black and white TV horizontal output applications |
TOSHIBA |
128 |
2SC1672 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
129 |
2SC1672 |
Medium Power Amplifiers and Switches |
Unknow |
130 |
2SC1674 |
NPN Silicon Transistor |
NEC |
131 |
2SC1674 |
TO-92 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
132 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
133 |
2SC1675 |
NPN SILICON TRANSISTOR |
Micro Electronics |
134 |
2SC1675 |
NPN Silicon Transistor |
NEC |
135 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
136 |
2SC1678 |
Transistor - JEIDA series |
National Semiconductor |
137 |
2SC1678 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
138 |
2SC1678 |
SILICON NPN EPITAXIAL PLANAR TYPE |
TOSHIBA |
139 |
2SC1678 |
SILICON NPN EPITAXIAL PLANAR TYPE |
TOSHIBA |
140 |
2SC2167 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
141 |
2SC3167 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
142 |
2SC4167 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
143 |
2SD1672 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR |
Unknow |
144 |
2SD1672 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR |
Unknow |
145 |
2SD1677 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
146 |
2SD1679 |
For low-frequency output amplification |
Panasonic |
147 |
2SD2167 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
148 |
2SJ167 |
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
149 |
2SK1167 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
150 |
2SK1167 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
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