No. |
Part Name |
Description |
Manufacturer |
121 |
IDT72V51446L6BB8 |
16Q x36 1M Multi-Queue, 3.3V |
IDT |
122 |
IDT72V51446L7-5BB |
16Q x36 1M Multi-Queue, 3.3V |
IDT |
123 |
IDT72V51446L7-5BB8 |
16Q x36 1M Multi-Queue, 3.3V |
IDT |
124 |
IDT72V51446L7-5BBI |
16Q x36 1M Multi-Queue, 3.3V |
IDT |
125 |
IDT72V51453 |
16Q x18 2M Multi-Queue, 3.3V |
IDT |
126 |
IDT72V51453L6BB |
16Q x18 2M Multi-Queue, 3.3V |
IDT |
127 |
IDT72V51453L6BB8 |
16Q x18 2M Multi-Queue, 3.3V |
IDT |
128 |
IDT72V51453L7-5BB |
16Q x18 2M Multi-Queue, 3.3V |
IDT |
129 |
IDT72V51453L7-5BB8 |
16Q x18 2M Multi-Queue, 3.3V |
IDT |
130 |
IDT72V51453L7-5BBI |
16Q x18 2M Multi-Queue, 3.3V |
IDT |
131 |
IDT72V51456 |
16Q x36 2M Multi-Queue, 3.3V |
IDT |
132 |
IDT72V51456L6BB |
16Q x36 2M Multi-Queue, 3.3V |
IDT |
133 |
IDT72V51456L6BB8 |
16Q x36 2M Multi-Queue, 3.3V |
IDT |
134 |
IDT72V51456L7-5BB |
16Q x36 2M Multi-Queue, 3.3V |
IDT |
135 |
IDT72V51456L7-5BB8 |
16Q x36 2M Multi-Queue, 3.3V |
IDT |
136 |
IDT72V51456L7-5BBI |
16Q x36 2M Multi-Queue, 3.3V |
IDT |
137 |
IRF7316Q |
-30V Dual P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package |
International Rectifier |
138 |
IRF7316QTRPBF |
-30V Dual P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package |
International Rectifier |
139 |
IRF7416Q |
-30V P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package |
International Rectifier |
140 |
IRF7416QTRPBF |
-30V P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package |
International Rectifier |
141 |
K9F1216Q0A-DCB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
142 |
K9F1216Q0A-DIB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
143 |
K9F1216Q0A-HCB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
144 |
K9F1216Q0A-HIB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
145 |
K9F1G16Q0M |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
Samsung Electronic |
146 |
K9F1G16Q0M-PCB0 |
1Gb Gb 1.8V NAND Flash Errata |
Samsung Electronic |
147 |
K9F1G16Q0M-PIB0 |
1Gb Gb 1.8V NAND Flash Errata |
Samsung Electronic |
148 |
K9F1G16Q0M-YCB0 |
1Gb Gb 1.8V NAND Flash Errata |
Samsung Electronic |
149 |
K9F1G16Q0M-YIB0 |
1Gb Gb 1.8V NAND Flash Errata |
Samsung Electronic |
150 |
K9F2816Q0C-DCB0 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory |
Samsung Electronic |
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