| No. |
Part Name |
Description |
Manufacturer |
| 121 |
STD19NE06L |
N-CHANNEL 60V - 0.038 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 122 |
STF19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 123 |
STF19NM50N |
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP |
ST Microelectronics |
| 124 |
STF19NM65N |
N-channel 650 V, 0.25 Ohm, 15.5 A, MDmesh(TM) 2 Power MOSFET in a TO-220FP package |
ST Microelectronics |
| 125 |
STGB19NC60H |
19 A - 600 V - very fast IGBT |
ST Microelectronics |
| 126 |
STGB19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 127 |
STGB19NC60HDT4 |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 128 |
STGB19NC60HT4 |
19 A - 600 V - very fast IGBT |
ST Microelectronics |
| 129 |
STGB19NC60KD |
short circuit rugged IGBT |
ST Microelectronics |
| 130 |
STGB19NC60KDT4 |
short circuit rugged IGBT |
ST Microelectronics |
| 131 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| 132 |
STGF19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 133 |
STGF19NC60KD |
short circuit rugged IGBT |
ST Microelectronics |
| 134 |
STGP19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 135 |
STGP19NC60KD |
short circuit rugged IGBT |
ST Microelectronics |
| 136 |
STGP19NC60S |
20 A, 600 V fast IGBT |
ST Microelectronics |
| 137 |
STGP19NC60SD |
20 A, 600 V fast IGBT with Ultrafast diode |
ST Microelectronics |
| 138 |
STGP19NC60WD |
Ultra fast "W" series |
ST Microelectronics |
| 139 |
STGW19NC60H |
very fast IGBT |
ST Microelectronics |
| 140 |
STGW19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 141 |
STGW19NC60W |
Ultra fast "W" series |
ST Microelectronics |
| 142 |
STGW19NC60WD |
Ultra fast "W" series |
ST Microelectronics |
| 143 |
STGWA19NC60HD |
31 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 144 |
STL19N65M5 |
N-channel 650 V, 0.215 Ohm typ., 12.5 A MDmesh(TM) V power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 145 |
STP19N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 146 |
STP19N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 147 |
STP19N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 148 |
STP19N06FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 149 |
STP19N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 150 |
STP19N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
