No. |
Part Name |
Description |
Manufacturer |
121 |
STB19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
122 |
STD19NE06 |
N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
123 |
STD19NE06 |
N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
ST Microelectronics |
124 |
STD19NE06L |
N-CHANNEL 60V - 0.038 OHM - 19A - TO-251/TO-252 STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
125 |
STD19NE06L |
N - CHANNEL 60V - 0.038 Ohm - 19A - TO-251/TO-252 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
126 |
STD19NE06L |
N-CHANNEL 60V - 0.038 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET |
ST Microelectronics |
127 |
STF19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
128 |
STF19NM50N |
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP |
ST Microelectronics |
129 |
STF19NM65N |
N-channel 650 V, 0.25 Ohm, 15.5 A, MDmesh(TM) 2 Power MOSFET in a TO-220FP package |
ST Microelectronics |
130 |
STGB19NC60H |
19 A - 600 V - very fast IGBT |
ST Microelectronics |
131 |
STGB19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
132 |
STGB19NC60HDT4 |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
133 |
STGB19NC60HT4 |
19 A - 600 V - very fast IGBT |
ST Microelectronics |
134 |
STGB19NC60KD |
short circuit rugged IGBT |
ST Microelectronics |
135 |
STGB19NC60KDT4 |
short circuit rugged IGBT |
ST Microelectronics |
136 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
137 |
STGF19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
138 |
STGF19NC60KD |
short circuit rugged IGBT |
ST Microelectronics |
139 |
STGP19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
140 |
STGP19NC60KD |
short circuit rugged IGBT |
ST Microelectronics |
141 |
STGP19NC60S |
20 A, 600 V fast IGBT |
ST Microelectronics |
142 |
STGP19NC60SD |
20 A, 600 V fast IGBT with Ultrafast diode |
ST Microelectronics |
143 |
STGP19NC60WD |
Ultra fast "W" series |
ST Microelectronics |
144 |
STGW19NC60H |
very fast IGBT |
ST Microelectronics |
145 |
STGW19NC60HD |
19 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
146 |
STGW19NC60W |
Ultra fast "W" series |
ST Microelectronics |
147 |
STGW19NC60WD |
Ultra fast "W" series |
ST Microelectronics |
148 |
STGWA19NC60HD |
31 A, 600 V, very fast IGBT with Ultrafast diode |
ST Microelectronics |
149 |
STL19N65M5 |
N-channel 650 V, 0.215 Ohm typ., 12.5 A MDmesh(TM) V power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
150 |
STP19N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
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