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Datasheets for 1MA

Datasheets found :: 948
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 2V420 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. NTE Electronics
122 2V480 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. NTE Electronics
123 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
124 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
125 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
126 524V13 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. NTE Electronics
127 524V15 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. NTE Electronics
128 524V17 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. NTE Electronics
129 524V25 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. NTE Electronics
130 524V27 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. NTE Electronics
131 524V30 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. NTE Electronics
132 524V42 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 680 V @ 1mA DC test current. NTE Electronics
133 524V48 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. NTE Electronics
134 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
135 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
136 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
137 5962-8864601MA Hi-Rel Adjustable Voltage Low Dropout 3-Terminal Positive Regulator International Rectifier
138 5962-8958701MA Hi-Rel Fixed Voltage Low Dropout 3-Terminal Positive Regulator International Rectifier
139 5962-8998101MA Hi-Rel Adjustable Voltage Low Dropout 3-Terminal Positive Regulator International Rectifier
140 7703401MA Hi-Rel Adjustable Voltage 3-Terminal Positive Regulator International Rectifier
141 8785 ��15KV ESD-PROTECTED, 1mA, 3 TO 5.5V, 250KBPS, RS-232 TRANSCEIVER WITH STAND-BY ST Microelectronics
142 AD8305 100 dB-range (10nA-1mA) Logarithmic Converter Analog Devices
143 AD8305-EVAL 100 dB-range (10nA-1mA) Logarithmic Converter Analog Devices
144 AD8305ACP-R2 100 dB-range (10nA-1mA) Logarithmic Converter Analog Devices
145 ADM6711MAKS Microprocessor Supervisory Circuit in 4-Lead SC70 Analog Devices
146 ADM6711MAKS-REEL Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Push-Pull Output Analog Devices
147 ADM6711MAKS-REEL7 Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Push-Pull Output Analog Devices
148 ADM811MART-REEL Microprocessors Supervisory Circuit in 4-Lead SOT-143 Analog Devices
149 ADM811MART-REEL-7 Microprocessors Supervisory Circuit in 4-Lead SOT-143 Analog Devices
150 ADM8611MABKS-RL Low-Voltage Manual Reset & Watchdog Supervisory Circuits in 4-Lead SC70 Analog Devices


Datasheets found :: 948
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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