No. |
Part Name |
Description |
Manufacturer |
121 |
2V420 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
122 |
2V480 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
123 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
124 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
125 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
126 |
524V13 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
127 |
524V15 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
128 |
524V17 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. |
NTE Electronics |
129 |
524V25 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
130 |
524V27 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
131 |
524V30 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
132 |
524V42 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
133 |
524V48 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
134 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
135 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
136 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
137 |
5962-8864601MA |
Hi-Rel Adjustable Voltage Low Dropout 3-Terminal Positive Regulator |
International Rectifier |
138 |
5962-8958701MA |
Hi-Rel Fixed Voltage Low Dropout 3-Terminal Positive Regulator |
International Rectifier |
139 |
5962-8998101MA |
Hi-Rel Adjustable Voltage Low Dropout 3-Terminal Positive Regulator |
International Rectifier |
140 |
7703401MA |
Hi-Rel Adjustable Voltage 3-Terminal Positive Regulator |
International Rectifier |
141 |
8785 |
��15KV ESD-PROTECTED, 1mA, 3 TO 5.5V, 250KBPS, RS-232 TRANSCEIVER WITH STAND-BY |
ST Microelectronics |
142 |
AD8305 |
100 dB-range (10nA-1mA) Logarithmic Converter |
Analog Devices |
143 |
AD8305-EVAL |
100 dB-range (10nA-1mA) Logarithmic Converter |
Analog Devices |
144 |
AD8305ACP-R2 |
100 dB-range (10nA-1mA) Logarithmic Converter |
Analog Devices |
145 |
ADM6711MAKS |
Microprocessor Supervisory Circuit in 4-Lead SC70 |
Analog Devices |
146 |
ADM6711MAKS-REEL |
Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Push-Pull Output |
Analog Devices |
147 |
ADM6711MAKS-REEL7 |
Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Push-Pull Output |
Analog Devices |
148 |
ADM811MART-REEL |
Microprocessors Supervisory Circuit in 4-Lead SOT-143 |
Analog Devices |
149 |
ADM811MART-REEL-7 |
Microprocessors Supervisory Circuit in 4-Lead SOT-143 |
Analog Devices |
150 |
ADM8611MABKS-RL |
Low-Voltage Manual Reset & Watchdog Supervisory Circuits in 4-Lead SC70 |
Analog Devices |
| | | |