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Datasheets for 2.31

Datasheets found :: 169
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
121 MAX6734KAZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
122 MAX6734KAZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
123 MAX6735KAZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
124 MAX6735KAZID3-T Vcc1: 2.313 V, Vcc2: 1.338 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
125 MAX6735KAZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
126 MAX6736XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
127 MAX6736XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
128 MAX6736XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
129 MAX6736XKZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
130 MAX6736XKZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
131 MAX6737XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
132 MAX6737XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
133 MAX6737XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
134 MAX6737XKZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
135 MAX6737XKZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
136 MAX6738XKZD3-T Vcc1: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
137 MAX6739XKZD3-T Vcc1: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
138 MAX6740XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
139 MAX6740XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
140 MAX6740XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
141 MAX6740XKZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
142 MAX6740XKZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
143 MAX6741XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
144 MAX6741XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
145 MAX6741XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
146 MAX6741XKZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
147 MAX6741XKZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
148 MAX6742XKZD3-T Vcc1: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
149 MAX6743XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
150 MAX6743XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 169
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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