| No. |
Part Name |
Description |
Manufacturer |
| 121 |
NTHD5902 |
Power MOSFET 30 V, 2.9 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 122 |
NTHD5902 |
Power MOSFET 30 V, 2.9 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 123 |
NTHD5902 |
Power MOSFET 30 V, 2.9 A, N-Channel Dual ChipFET™ |
ON Semiconductor |
| 124 |
NTHD5902T1-D |
Power MOSFET Dual N-Channel ChipFET 2.9 Amps, 30 Volts |
ON Semiconductor |
| 125 |
PH2729-11OM |
Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty 2.7 - 2.9 GHz |
Tyco Electronics |
| 126 |
PH2729-150M |
Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz, 100ms Pulse, 10% Duty |
Tyco Electronics |
| 127 |
PH2729-65M |
Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty 2.7 - 2.9 GHz |
Tyco Electronics |
| 128 |
PH2729-8SM |
Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty 2.7 - 2.9 GHz |
Tyco Electronics |
| 129 |
PH2729430M |
Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz |
Tyco Electronics |
| 130 |
PH2931-I3 |
Radar Pulsed Power Transistor, 135W, 20ms Pulse, 1% Duty 2.9 - 3.1 GHz |
Tyco Electronics |
| 131 |
PSMN013-80YS |
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET |
Nexperia |
| 132 |
PSMN013-80YS |
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET |
NXP Semiconductors |
| 133 |
PSMN2R8-40BS |
N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK |
Nexperia |
| 134 |
PSMN2R8-40BS |
N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK |
NXP Semiconductors |
| 135 |
QPA3055D |
2.9 - 3.6 GHz 90 Watt GaN Power Amplifier |
Qorvo |
| 136 |
QPD1019 |
500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET |
Qorvo |
| 137 |
QPD1881L |
400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor |
Qorvo |
| 138 |
SGA-3286 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 12.9 dB at 1950 MHz. |
Stanford Microdevices |
| 139 |
SMBJ5952A |
1.5W silicon surface mount zener diode. Zener voltage 130 V. Test current 2.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 140 |
SMBJ5952B |
1.5W silicon surface mount zener diode. Zener voltage 130 V. Test current 2.9 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 141 |
SMBJ5952C |
1.5W silicon surface mount zener diode. Zener voltage 130 V. Test current 2.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 142 |
SMBJ5952D |
1.5W silicon surface mount zener diode. Zener voltage 130 V. Test current 2.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 143 |
SSM4321 |
Mono 2.9 W Class-D Audio Amplifier with Digital Current and Voltage Output |
Analog Devices |
| 144 |
STF5N105K5 |
N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 145 |
STP190N55LF3 |
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
| 146 |
STP5N105K5 |
N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFETs in TO-220 package |
ST Microelectronics |
| 147 |
TGA2817-SM |
2.9 - 3.5 GHz, 60 Watt S Band GaN Power Amplifier |
Qorvo |
| 148 |
TXS0206-29 |
MMC, SD Card, MemoryStick Voltage-Translation With ESD Protection, EMI Filtering, and 2.9 V LDO |
Texas Instruments |
| 149 |
TXS0206-29YFPR |
MMC, SD Card, MemoryStick Voltage-Translation With ESD Protection, EMI Filtering, and 2.9 V LDO 20-DSBGA -40 to 85 |
Texas Instruments |
| 150 |
TXS0206-29YFPRB |
MMC, SD Card, MemoryStick Voltage-Translation With ESD Protection, EMI Filtering, and 2.9 V LDO 20-DSBGA -40 to 85 |
Texas Instruments |
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