| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MJE340 |
20.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE350 |
Continental Device India Limited |
| 122 |
MJE350 |
20.000W Switching PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE340 |
Continental Device India Limited |
| 123 |
P4SMAJ120-T1 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 124 |
P4SMAJ120-T3 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 125 |
P4SMAJ120A-T1 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 126 |
P4SMAJ120A-T3 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 127 |
P4SMAJ120C-T1 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 128 |
P4SMAJ120C-T3 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 129 |
P4SMAJ120CA-T1 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 130 |
P4SMAJ120CA-T3 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 131 |
SA120 |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 132 |
SA120A |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 133 |
SA120C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 120.00 V. Test current IT = 1 mA. |
Bytes |
| 134 |
SA120CA |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 120.00 V. Test current IT = 1 mA. |
Bytes |
| 135 |
SD1030CS-T3 |
Reverse voltage: 20.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 136 |
SD1040CS-T3 |
Reverse voltage: 20.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 137 |
SG531P20.0000M |
Crystal oscillator, 20.0000MHz |
Epson Company |
| 138 |
SG531P20.0000M |
Crystal oscillator, 20.0000MHz |
Epson Company |
| 139 |
SMAJ120 |
120.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 140 |
SMAJ120A |
120.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 141 |
SMBJ120 |
120.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 142 |
SMBJ120A |
120.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 143 |
SMCJ120 |
120.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 144 |
SMCJ120A |
120.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 145 |
SMDJ120 |
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 146 |
SMDJ120A |
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 147 |
SMLJ120 |
120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 148 |
SMLJ120A |
120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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