No. |
Part Name |
Description |
Manufacturer |
121 |
M393T2953BZ0-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
122 |
M393T2953BZ3-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
123 |
M393T5750BS0-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
124 |
M393T5750BS3-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
125 |
M393T5750BY0-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
126 |
M393T5750BY3-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
127 |
M393T6553BG |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
128 |
M393T6553BG0-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
129 |
M393T6553BG3-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
130 |
M393T6553BZ0-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
131 |
M393T6553BZ3-CD5/CC |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC |
Samsung Electronic |
132 |
M5240P |
V(cc): +-18V; +-50mA; 1000W; dual low-noise J-fet input operational amplifier. For stereo equipment, tape decks and digital audio disc players, mixer |
Mitsubishi Electric Corporation |
133 |
M66240P |
4-CH 16-BIT PWM GENERATOR |
Mitsubishi Electric Corporation |
134 |
M66240P |
ASSP>ICs for LBP/PPC>PWM Generators |
Renesas |
135 |
M74HCT240PU |
OCTAL BUS BUFFERS WITH PULL-UP INPUT NETWORK |
SGS Thomson Microelectronics |
136 |
MK50240P |
Top-octave frequency generator |
Mostek |
137 |
NSR0240P2 |
40 V Schottky Barrier Diode |
ON Semiconductor |
138 |
PBSM5240PF |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
Nexperia |
139 |
PBSM5240PF |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
NXP Semiconductors |
140 |
PBSM5240PFH |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
Nexperia |
141 |
PBSM5240PFH |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
NXP Semiconductors |
142 |
PT2240P |
Programmable Encoder IC |
Princeton Technology Corporation |
143 |
PT2240P-16 |
Programmable Encoder IC |
Princeton Technology Corporation |
144 |
PT2240P-16S |
Programmable Encoder IC |
Princeton Technology Corporation |
145 |
PT2240P-D3 |
Programmable Encoder IC |
Princeton Technology Corporation |
146 |
PT2240P-D3S |
Programmable Encoder IC |
Princeton Technology Corporation |
147 |
PT2240P-S |
Programmable Encoder IC |
Princeton Technology Corporation |
148 |
S10040240P |
40 - 1000 MHz, 24 dB GaAs Push-Pull Hybrid Amplifier |
Qorvo |
149 |
S8740240P |
40 - 870 MHz, 24 dB GaAs Push-Pull Hybrid Amplifier |
Qorvo |
150 |
SN65240P |
Dual Universal Serial Bus Port Transient Suppressor |
Texas Instruments |
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