No. |
Part Name |
Description |
Manufacturer |
121 |
2N6755 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
122 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
123 |
2N6755 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
124 |
2N6756 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
125 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
126 |
2N6756 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
127 |
2N6756 |
N-Channel |
Microsemi |
128 |
2N6756 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
129 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
130 |
2N6756E3 |
N-Channel |
Microsemi |
131 |
2N6757 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
132 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
133 |
2N6758 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
134 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
135 |
2N6758 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
136 |
2N6758 |
N-Channel |
Microsemi |
137 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
138 |
2N6758E3 |
N-Channel |
Microsemi |
139 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
140 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
141 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
142 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
143 |
2N6760 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
144 |
2N6760 |
N-Channel |
Microsemi |
145 |
2N6760 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
146 |
2N6760E3 |
N-Channel |
Microsemi |
147 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
148 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
149 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
150 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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