| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AT65-0413-TB |
DC-3 GHz, digital attenuator, 15 dB, 4-bit, TTL driver |
MA-Com |
| 122 |
AT65-0413TR |
DC-3 GHz, digital attenuator, 15 dB, 4-bit, TTL driver |
MA-Com |
| 123 |
ATR2807 |
3.3 GHz LO + PLL-chip |
Atmel |
| 124 |
AWB7123H |
1.93 GHz to 1.99 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 125 |
AWB7123HM41P8 |
1.93 GHz to 1.99 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 126 |
AWS5503-S15 |
GaAs IC High Power SPDT Reflective Switch Positive Control DC - 3 GHz |
Anadigics Inc |
| 127 |
AWS5503S15 |
GaAs IC High Power SPDT Reflective Switch Positive Control DC-3 GHz |
Anadigics Inc |
| 128 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 129 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 130 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 131 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 132 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 133 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 134 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 135 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 136 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 137 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 138 |
BB103 green |
Silicon Capacitance Diode |
Siemens |
| 139 |
BB103 green |
Silicon Planar Capacitance Diode for the VHF-range |
Siemens |
| 140 |
BC123 green |
NPN Silicon Transistor in miniature case for AF applications |
Siemens |
| 141 |
BC203 green |
PNP Silicon Transistor in miniature case for AF-applications |
Siemens |
| 142 |
BFG17 |
NPN 3 GHz wideband transistor |
Philips |
| 143 |
BFG17A |
NPN 3 GHz wideband transistor |
Philips |
| 144 |
BFS17A |
NPN 3 GHz wideband transistor |
NXP Semiconductors |
| 145 |
BFS17A |
NPN 3 GHz wideband transistor |
Philips |
| 146 |
BTS 723 GW |
High Side Switches |
Infineon |
| 147 |
CGH27015 |
15W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
Wolfspeed |
| 148 |
CGH27030 |
30W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
Wolfspeed |
| 149 |
CGH27060 |
8W (average), 28V, GaN HEMT for linear communications ranging from VHF to 3 GHz |
Wolfspeed |
| 150 |
CGHV40100 |
100W, DC CGHV40100 3 GHz, 50V, GaN HEMT |
Wolfspeed |
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