| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MAX11301GTL+ |
PIXI, 20-Port Programmable Mixed-Signal I/O with 12-Bit ADC, 12-Bit DAC, Analog Switches, and GPIO |
MAXIM - Dallas Semiconductor |
| 122 |
MAX11301GTL+T |
PIXI, 20-Port Programmable Mixed-Signal I/O with 12-Bit ADC, 12-Bit DAC, Analog Switches, and GPIO |
MAXIM - Dallas Semiconductor |
| 123 |
MC301G |
5-Input OR/NOR Gate |
Motorola |
| 124 |
MM1301GW |
Protection of lithium ion battery (four cells in series) |
Mitsumi Electric |
| 125 |
NT2H0301G0DUD |
NFC Forum Type 2 Tag compliant IC with 144 bytes user memory |
NXP Semiconductors |
| 126 |
NX6301GH |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. |
NEC |
| 127 |
NX6301GI |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. |
NEC |
| 128 |
NX6301GJ |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. |
NEC |
| 129 |
NX6301GK |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. |
NEC |
| 130 |
SFAD301G |
Rectifier: Superfast |
Taiwan Semiconductor |
| 131 |
UF301G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes) |
Panjit International Inc |
| 132 |
UF301G |
100 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 133 |
UF301G |
100 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRSYS |
| 134 |
UPD65301GA-XXX-9EU |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
| 135 |
XE3301G |
Multi-national 33,600 BPS modem module. Germany. |
XECOM |
| 136 |
XN0B301G |
Silicon PNP epitaxial planar type (Tr1), Silicon NPN epitaxial planar type (Tr2) |
Panasonic |
| 137 |
XN0C301G |
Silicon PNP epitaxial planar type (Tr1), Silicon NPN epitaxial planar type (Tr2) |
Panasonic |
| | | |
