| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MSP430FR5737IDA |
MSP430FR5737 24 MHz ULP microcontroller with 16 KB FRAM, 1 KB SRAM, 32 IO and comparator 38-TSSOP -40 to 85 |
Texas Instruments |
| 122 |
MSP430FR5737IDAR |
MSP430FR5737 24 MHz ULP microcontroller with 16 KB FRAM, 1 KB SRAM, 32 IO and comparator 38-TSSOP -40 to 85 |
Texas Instruments |
| 123 |
MSP430FR5737IRHAR |
MSP430FR5737 24 MHz ULP microcontroller with 16 KB FRAM, 1 KB SRAM, 32 IO and comparator 40-VQFN -40 to 85 |
Texas Instruments |
| 124 |
MSP430FR5737IRHAT |
MSP430FR5737 24 MHz ULP microcontroller with 16 KB FRAM, 1 KB SRAM, 32 IO and comparator 40-VQFN -40 to 85 |
Texas Instruments |
| 125 |
NK08 |
Heat sink for BStN33, BStN34, BStN37 series |
Siemens |
| 126 |
NTB35N15 |
Power MOSFET 37 Amps, 150 Volts |
ON Semiconductor |
| 127 |
NTB35N15-D |
Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 128 |
NTD4910N |
Power MOSFET, 30 V, 37 A, Single N-Channel |
ON Semiconductor |
| 129 |
NTD6414AN |
N-Channel Power MOSFET 100 V, 32 A, 37 mOHM |
ON Semiconductor |
| 130 |
NTP35N15 |
Power MOSFET 37 Amps, 150 Volts |
ON Semiconductor |
| 131 |
NTP35N15-D |
Power MOSFET 37 Amps, 150 Volts N-Channel TO-220 |
ON Semiconductor |
| 132 |
NTS4101P |
Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
ON Semiconductor |
| 133 |
NTTFS4928N |
Power MOSFET, 30 V, 37 A, Single N-Channel |
ON Semiconductor |
| 134 |
NTTFS5820NL |
Power MOSFET, 60 V, 37 A, 11.5 mΩ |
ON Semiconductor |
| 135 |
NX8560SJ545-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. FC-UPC connector. |
NEC |
| 136 |
NX8560SJ545-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. SC-UPC connector. |
NEC |
| 137 |
NX8567SA545-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. SC-UPC connector. |
NEC |
| 138 |
NX8567SAM545-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. FC-UPC connector. |
NEC |
| 139 |
NX8567SAM545-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. SC-UPC connector. |
NEC |
| 140 |
NX8567SAS545-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. FC-UPC connector. |
NEC |
| 141 |
NX8567SAS545-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. SC-UPC connector. |
NEC |
| 142 |
NX8570SC545-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. FC-PC connector. |
NEC |
| 143 |
NX8570SC545-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. SC-PC connector. |
NEC |
| 144 |
NX8571SC545-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. FC-PC connector. |
NEC |
| 145 |
NX8571SC545-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1554.537 nm. Frequency 192.85 THz. SC-PC connector. |
NEC |
| 146 |
P4KE130A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 147 |
P4KE130CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 148 |
P4KE250CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 149 |
P6KE130CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 124.0 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 150 |
P6KE250CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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