No. |
Part Name |
Description |
Manufacturer |
121 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
122 |
2N3866 |
Silicon NPN Transistor |
Motorola |
123 |
2N3866 |
R.F. power transistor |
Mullard |
124 |
2N3866 |
Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 |
New Jersey Semiconductor |
125 |
2N3866 |
Silicon planar epitaxial overlay transistors |
Philips |
126 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
127 |
2N3866 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
128 |
2N3866 |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
129 |
2N3866 |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
130 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
131 |
2N3866 |
Transistor for high frequency amplifiers |
SGS-ATES |
132 |
2N3866 |
RF transistor |
Texas Instruments |
133 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
134 |
2N3866A |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
135 |
2N3866A |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
136 |
2N3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
137 |
2N3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
138 |
2N3866AF |
Chip: geometry 1007; polarity NPN |
Semicoa Semiconductor |
139 |
2N3866AUB |
NPN Transistor |
Microsemi |
140 |
2N3866AUB |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
141 |
2N3866AUB |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
142 |
2N3866UB |
NPN Transistor |
Microsemi |
143 |
2N3867 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
144 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
145 |
2N3867 |
PNP Transistor |
Microsemi |
146 |
2N3867 |
PNP Transistor |
Microsemi |
147 |
2N3867 |
Silicon PNP Transistor |
Motorola |
148 |
2N3867 |
Trans GP BJT PNP 40V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
149 |
2N3867 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
150 |
2N3867 |
Planar transistor for switching applications |
SGS-ATES |
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