No. |
Part Name |
Description |
Manufacturer |
121 |
K4H640838B-TLB0 |
128Mb DDR SDRAM |
Samsung Electronic |
122 |
K4H641638B-TCA0 |
128Mb DDR SDRAM |
Samsung Electronic |
123 |
K4H641638B-TCA2 |
128Mb DDR SDRAM |
Samsung Electronic |
124 |
K4H641638B-TCB0 |
128Mb DDR SDRAM |
Samsung Electronic |
125 |
K4H641638B-TLA0 |
128Mb DDR SDRAM |
Samsung Electronic |
126 |
K4H641638B-TLA2 |
128Mb DDR SDRAM |
Samsung Electronic |
127 |
K4H641638B-TLB0 |
128Mb DDR SDRAM |
Samsung Electronic |
128 |
K4H643238B-TCA0 |
128Mb DDR SDRAM |
Samsung Electronic |
129 |
K4H643238B-TCA2 |
128Mb DDR SDRAM |
Samsung Electronic |
130 |
K4H643238B-TCB0 |
128Mb DDR SDRAM |
Samsung Electronic |
131 |
K4H643238B-TLA0 |
128Mb DDR SDRAM |
Samsung Electronic |
132 |
K4H643238B-TLA2 |
128Mb DDR SDRAM |
Samsung Electronic |
133 |
K4H643238B-TLB0 |
128Mb DDR SDRAM |
Samsung Electronic |
134 |
MAX6319LHUK38B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 3.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
135 |
MAX6319MHUK38B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 3.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
136 |
MAX6322HPUK38B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 3.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
137 |
R1112N38B-TL |
Low noise 150mA LDO regulator. Output voltage 3.8V. Active high type. Taping type TL |
Ricoh |
138 |
R1112N38B-TR |
Low noise 150mA LDO regulator. Output voltage 3.8V. Active high type. Standard taping type TR |
Ricoh |
139 |
T8538B-TL-DB |
Quad programmable codec. Dry pack tray. |
Agere Systems |
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