No. |
Part Name |
Description |
Manufacturer |
121 |
SPN03N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
122 |
SPN03N60S5 |
for lowest Conduction Losses |
Infineon |
123 |
SPP03N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
124 |
SPP03N60S5 |
for lowest Conduction Losses |
Infineon |
125 |
SPU03N60S5 |
for lowest Conduction Losses |
Infineon |
126 |
STB13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
127 |
STB33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in D2PAK package |
ST Microelectronics |
128 |
STB3N60-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
129 |
STB3N60-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
130 |
STD13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
131 |
STF13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
132 |
STF33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220FP package |
ST Microelectronics |
133 |
STFI13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
134 |
STI33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAK package |
ST Microelectronics |
135 |
STL13N60M2 |
N-channel 600 V, 0.39 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT 5x6 HV package |
ST Microelectronics |
136 |
STL33N60M2 |
N-channel 600 V, 0.115 Ohm typ., 21.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
137 |
STP13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
138 |
STP33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220 package |
ST Microelectronics |
139 |
STU13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
140 |
STW13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
141 |
STW33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-247 package |
ST Microelectronics |
142 |
T63N600 |
Mains Frequency Thyristor |
IPRS Baneasa |
143 |
T63N600 |
63 AMPS 600V THYRISTOR |
IPRS Baneasa |
144 |
T63N600C |
Mains Frequency Thyristor |
IPRS Baneasa |
145 |
T63N600F |
Mains Frequency Thyristor |
IPRS Baneasa |
146 |
TT63N600 |
Compact module Thyristor-Thyristor 600V |
IPRS Baneasa |
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