No. |
Part Name |
Description |
Manufacturer |
121 |
NJG1556KB2-L2 |
Low Cost Silicon Double Balanced HMIC �� Mixer 4.7 - 6.0 GHz |
Tyco Electronics |
122 |
NJG1556KB2-L3 |
Low Cost Silicon Double Balanced HMIC �� Mixer 4.7 - 6.0 GHz |
Tyco Electronics |
123 |
NJG1556KB2-L4 |
Low Cost Silicon Double Balanced HMIC �� Mixer 4.7 - 6.0 GHz |
Tyco Electronics |
124 |
NJG1556KB2-L5 |
Low Cost Silicon Double Balanced HMIC �� Mixer 4.7 - 6.0 GHz |
Tyco Electronics |
125 |
NJG1556KB2-L6 |
Low Cost Silicon Double Balanced HMIC �� Mixer 4.7 - 6.0 GHz |
Tyco Electronics |
126 |
NJG1556KB2-L7 |
Low Cost Silicon Double Balanced HMIC �� Mixer 4.7 - 6.0 GHz |
Tyco Electronics |
127 |
NJG1556KB2-R1 |
Low Cost Silicon Double Balanced HMIC �� Mixer 4.7 - 6.0 GHz |
Tyco Electronics |
128 |
NJG1556KB2-R2 |
Low Cost Silicon Double Balanced HMIC �� Mixer 4.7 - 6.0 GHz |
Tyco Electronics |
129 |
NTGS4111P |
Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 |
ON Semiconductor |
130 |
NTLJD3183CZ |
Power MOSFET, 20 V/−20 V, 4.7 A/−4.0 A, uCool¿, Complementary, 2x2 mm, WDFN Package |
ON Semiconductor |
131 |
NTLMS4501N |
Power MOSFET 30 V, 14.7 A, N-Channel, SO-8 Leadless Package |
ON Semiconductor |
132 |
NVTFS4824N |
Power MOSFET, 30 V, 46 A, 4.7 mΩ, Single N-Channel |
ON Semiconductor |
133 |
PACSZ128403Q |
4.7 Kom/33 om, 150 pF, 5 V, IEEE 1284 parallel port ESD/EMI/termination network |
California Micro Devices Corp |
134 |
PACSZ128403QR |
4.7 Kom/33 om, 150 pF, 5 V, IEEE 1284 parallel port ESD/EMI/termination network |
California Micro Devices Corp |
135 |
PACZIG128404Q |
4.7 Kom/33om, 150 pF, IEEE 1284 parallel port ESD/EMI/termination network |
California Micro Devices Corp |
136 |
PBSS304NX |
60 V, 4.7 A NPN low VCEsat (BISS) transistor |
Nexperia |
137 |
PBSS304NX |
60 V, 4.7 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
138 |
PBSS4032NX |
30 V, 4.7 A NPN low VCEsat (BISS) transistor |
Nexperia |
139 |
PBSS4032NX |
30 V, 4.7 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
140 |
PDTA143EE |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
Nexperia |
141 |
PDTA143EE |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
Nexperia |
142 |
PDTA143EE |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
NXP Semiconductors |
143 |
PDTA143EE |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
NXP Semiconductors |
144 |
PDTA143EEF |
PDTA143E series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm |
Philips |
145 |
PDTA143EEF |
PDTA143E series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm |
Philips |
146 |
PDTA143EM |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
Nexperia |
147 |
PDTA143EM |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
Nexperia |
148 |
PDTA143EM |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
NXP Semiconductors |
149 |
PDTA143EM |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
NXP Semiconductors |
150 |
PDTA143EM |
PDTA143E series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm |
Philips |
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