No. |
Part Name |
Description |
Manufacturer |
121 |
1N416D |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
122 |
1N416D |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
123 |
1N416E |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
124 |
1N416E |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
125 |
1N416F |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
126 |
1N416G |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
127 |
1N416G |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
128 |
1N416GM |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
129 |
1N4416 |
Zener Diode 33V 1W |
Motorola |
130 |
1N4416 |
Diode Zener Single 68V 5% 1.5W 2-Pin DO-41 |
New Jersey Semiconductor |
131 |
1N4416B |
ZENER DIODES |
Unknow |
132 |
1N5416 |
Leaded Rectifier General Purpose |
Central Semiconductor |
133 |
1N5416 |
GLASS PASSIVATED FAST SWITCHING RECTIFIER |
General Semiconductor |
134 |
1N5416 |
Fast Rectifier (100-500ns) |
Microsemi |
135 |
1N5416 |
Rectifier Diode 100V |
Motorola |
136 |
1N5416 |
Diode Switching 100V 3A 2-Pin GPR-3A |
New Jersey Semiconductor |
137 |
1N5416 |
100 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
138 |
1N5416E3 |
Fast Rectifier (100-500ns) |
Microsemi |
139 |
1N5416US |
Fast Rectifier (100-500ns) |
Microsemi |
140 |
1N5416USE3 |
Fast Rectifier (100-500ns) |
Microsemi |
141 |
1SS416 |
Small-signal Schottky barrier diode |
TOSHIBA |
142 |
1SS416CT |
Small-signal Schottky barrier diode |
TOSHIBA |
143 |
23226416 |
NTC Thermistors, Molded Range |
Vishay |
144 |
23226416.104 |
NTC Thermistors, Molded Range |
Vishay |
145 |
23226416.123 |
NTC Thermistors, Molded Range |
Vishay |
146 |
23226416.153 |
NTC Thermistors, Molded Range |
Vishay |
147 |
23226416.222 |
NTC Thermistors, Molded Range |
Vishay |
148 |
23226416.272 |
NTC Thermistors, Molded Range |
Vishay |
149 |
23226416.333 |
NTC Thermistors, Molded Range |
Vishay |
150 |
23226416.474 |
NTC Thermistors, Molded Range |
Vishay |
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