No. |
Part Name |
Description |
Manufacturer |
121 |
TC59S6416BFT-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
122 |
TC59S6416BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
123 |
TC59S6416BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
124 |
TC59S6416BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
125 |
TC59S6416BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
126 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
127 |
TC59S6416BFTL-80 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
128 |
UT62L6416BS-55L |
Access time: 55 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
129 |
UT62L6416BS-55LE |
Access time: 55 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
130 |
UT62L6416BS-55LL |
Access time: 55 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
131 |
UT62L6416BS-55LLE |
Access time: 55 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
132 |
UT62L6416BS-70L |
Access time: 70 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
133 |
UT62L6416BS-70LE |
Access time: 70 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
134 |
UT62L6416BS-70LL |
Access time: 70 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
135 |
UT62L6416BS-70LLE |
Access time: 70 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
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