| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2SD1435 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 122 |
2SD1435K |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 123 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
| 124 |
2SD235G |
Silicon NPN diffused junction power transistor, complementary to 2SB435G |
TOSHIBA |
| 125 |
2SK1435 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 126 |
2SK3435 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 127 |
2SK3435-S |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 128 |
2SK3435-Z |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 129 |
2SK435 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 130 |
2SK435 |
Silicon N-Channel Junction FET |
Hitachi Semiconductor |
| 131 |
2SK435 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 132 |
307C1435 |
PTCR Overcurrent Protection |
Vishay |
| 133 |
4435 |
ARX4435N Transceiver for Macair H009 Specification |
Aeroflex Circuit Technology |
| 134 |
4435 |
ARX4435N Transceiver for Macair H009 Specification |
Aeroflex Circuit Technology |
| 135 |
4435 |
ARX4435 Transceiver for Macair H009 Specification |
Aeroflex Circuit Technology |
| 136 |
4435 |
ARX4435 Transceiver for Macair H009 Specification |
Aeroflex Circuit Technology |
| 137 |
5962H3829435BNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 138 |
5962H3829435BNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 139 |
5962H3829435BNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 140 |
5962H3829435BXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 141 |
5962H3829435BXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 142 |
5962H3829435BXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 143 |
5962H3829435SNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder. |
Aeroflex Circuit Technology |
| 144 |
5962H3829435SNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold. |
Aeroflex Circuit Technology |
| 145 |
5962H3829435SNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional. |
Aeroflex Circuit Technology |
| 146 |
5962H3829435SXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder. |
Aeroflex Circuit Technology |
| 147 |
5962H3829435SXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold. |
Aeroflex Circuit Technology |
| 148 |
5962H3829435SXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional. |
Aeroflex Circuit Technology |
| 149 |
5962R3829435BNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 150 |
5962R3829435BNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
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