No. |
Part Name |
Description |
Manufacturer |
121 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
122 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
123 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
124 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
125 |
KM44C256D-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
126 |
KM44C256D-7 |
60ns; V(cc/in/out): -1.0 to 7.0V; 358mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
127 |
KM44C256D-8 |
60ns; V(cc/in/out): -1.0 to 7.0V; 330mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
128 |
KVR133X64C2512 |
512MB 64M x 64-Bit PC133 CL2 Low Profile 168-Pin Dimm Module |
Kingston Technology |
129 |
MCM44C256B |
4MB R4000 Secondary Cache Fast Static RAM Module Set |
Motorola |
130 |
MCM44C256BSG12 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
131 |
MCM44C256BSG15 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
132 |
MCM44C256BSG17 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
133 |
MSU2954C25 |
8-Bit Micro-controller |
Mosel Vitelic Corp |
134 |
MSU2964C25 |
8-Bit Micro-controller |
Mosel Vitelic Corp |
135 |
NTTFS4C25N |
30 V, 27 A, Single N-Channel, u8FL Power MOSFET |
ON Semiconductor |
136 |
NVTFS4C25N |
30 V, 17 mOhm, 22 A Single N-Channel u8FL Power MOSFET |
ON Semiconductor |
137 |
SMJ44C251B |
262144 by 4-bit multiport vodeo RAM |
Austin Semiconductor |
138 |
SMJ44C251B-10 |
262144 by 4-bit multiport video RAM |
Austin Semiconductor |
139 |
SMJ44C251B-12 |
262144 by 4-bit multiport video RAM |
Austin Semiconductor |
140 |
SMJ44C256-10 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
141 |
SMJ44C256-12 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
142 |
SMJ44C256-14 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
143 |
SMJ44C256-15 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
144 |
SMJ44C256-80 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
145 |
TMP94C251AF |
Quality And Reliability Assurance / Handling Precautions |
TOSHIBA |
146 |
TPS544C25 |
4.5-V to 18-V, 30-A Voltage Mode PMBus? SWIFT? Step-Down DC-DC Converter with FSYNC 40-LQFN-CLIP -40 to 125 |
Texas Instruments |
147 |
TPS544C25RVFR |
4.5-V to 18-V, 30-A Voltage Mode PMBus? SWIFT? Step-Down DC-DC Converter with FSYNC 40-LQFN-CLIP -40 to 125 |
Texas Instruments |
148 |
TPS544C25RVFT |
4.5-V to 18-V, 30-A Voltage Mode PMBus? SWIFT? Step-Down DC-DC Converter with FSYNC 40-LQFN-CLIP -40 to 125 |
Texas Instruments |
149 |
TU24C256CP3 |
CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
150 |
TU24C256CS3 |
CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
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