No. |
Part Name |
Description |
Manufacturer |
121 |
HMC484MS8G |
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz |
Hittite Microwave Corporation |
122 |
ISD4003-04MS |
Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations |
etc |
123 |
ISD4003-04MS |
4 minutes single-chip voice record/playback device |
Information Storage Devices |
124 |
ISD4003-04MSD |
Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations |
etc |
125 |
ISD4003-04MSI |
Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations |
etc |
126 |
ISD4003-04MSI |
4 minutes single-chip voice record/playback device |
Information Storage Devices |
127 |
ISL5217 |
Up Converter, Quad, Programmable, (QPUC), Sample Rates to 104MSPS, Input Data Rates to 6.5MSPS |
Intersil |
128 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
129 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
130 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
131 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
132 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
133 |
KM416V1004CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
134 |
KM416V1004CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
135 |
KM416V1004CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
136 |
KM416V1004CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
137 |
LM4834MS |
Boomer 1.75W Audio Power Amplifier with DC Volume Control and Microphone Preamp |
National Semiconductor |
138 |
LM4834MSX |
Boomer 1.75W Audio Power Amplifier with DC Volume Control and Microphone Preamp |
National Semiconductor |
139 |
M38064MS-XXXFS |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
140 |
M38064MSDXXXGP |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
141 |
MAX1438B |
Octal, 12-Bit, 64Msps, 1.8V ADC with Serial LVDS Outputs |
MAXIM - Dallas Semiconductor |
142 |
MAX1438BETK+ |
Octal, 12-Bit, 64Msps, 1.8V ADC with Serial LVDS Outputs |
MAXIM - Dallas Semiconductor |
143 |
MAX1438BETK+T |
Octal, 12-Bit, 64Msps, 1.8V ADC with Serial LVDS Outputs |
MAXIM - Dallas Semiconductor |
144 |
MAX6354MSUK-T |
Dual/Triple-Voltage ��P Supervisory Circuits |
MAXIM - Dallas Semiconductor |
145 |
MAX6354MSUT-T |
Dual/Triple-Voltage ��P Supervisory Circuits |
MAXIM - Dallas Semiconductor |
146 |
MAX6634MSA |
12-Bit Plus Sign Temperature Sensors with SMBus/I2C-Compatible Serial Interface |
MAXIM - Dallas Semiconductor |
147 |
MAX6634MSA+ |
12-Bit Plus Sign Temperature Sensors with SMBus/I²C-Compatible Serial Interface |
MAXIM - Dallas Semiconductor |
148 |
MAX6634MSA+T |
12-Bit Plus Sign Temperature Sensors with SMBus/I²C-Compatible Serial Interface |
MAXIM - Dallas Semiconductor |
149 |
MAX664MSA/PR |
Dual Mode™ 5V Programmable Micropower Voltage Regulators |
MAXIM - Dallas Semiconductor |
150 |
MAX674MSA/PR |
+10V Precision Voltage Reference |
MAXIM - Dallas Semiconductor |
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