| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MCU04N60 |
Medium Power MOSFETS |
Micro Commercial Components |
| 122 |
MCU04N65 |
Medium Power MOSFETS |
Micro Commercial Components |
| 123 |
MGP14N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 124 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 125 |
MGP4N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 126 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 127 |
MGP4N60ED |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
ON Semiconductor |
| 128 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 129 |
MGW14N60ED |
Insulated Gate Bipolar Transistor |
ON Semiconductor |
| 130 |
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 131 |
MMBC1654N6 |
NPN silicon high voltage transistor. |
Motorola |
| 132 |
MTP4N60 |
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
| 133 |
NDF04N60Z |
Power MOSFET, N-Channel, 600 V, 2.0 Ω |
ON Semiconductor |
| 134 |
NDF04N62Z |
Power MOSFET 620V 2 Ohm Single N-Channel |
ON Semiconductor |
| 135 |
NTD4N60-D |
Power MOSFET 4 Amps, 600 Volts N-Channel DPAK |
ON Semiconductor |
| 136 |
PHB4N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 137 |
PHP4N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 138 |
PHX4N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 139 |
SGB04N60 |
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT |
Infineon |
| 140 |
SGD04N60 |
IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT |
Infineon |
| 141 |
SGP04N60 |
IGBTs & DuoPacks - 4A 600V TO 220AB IGBT |
Infineon |
| 142 |
SGU04N60 |
Fast IGBT in NPT-technology |
Infineon |
| 143 |
SKB04N60 |
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT+Diode |
Infineon |
| 144 |
SKP04N60 |
IGBTs & DuoPacks - 4A 600V TO220AB IGBT+Diode |
Infineon |
| 145 |
SMM14N65 |
MOSPOWER N-Channel Enhancement Mode Transistor 650V 14A |
Siliconix |
| 146 |
SPA04N60C2 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 147 |
SPA04N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 148 |
SPB04N60C2 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 149 |
SPB04N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 150 |
SPB04N60S5 |
for lowest Conduction Losses |
Infineon |
| | | |
