DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 4R2

Datasheets found :: 221
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
121 ERJXGNF44R2Y General Purpose Precision Thick Chip Resistors Panasonic
122 HCPL0534R2 SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us Fairchild Semiconductor
123 HCPL0534R2V SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us Fairchild Semiconductor
124 HLMP1700C4R2 High Efficiency Red Right Angle T-100 (3 mm) Diffused Fairchild Semiconductor
125 HMA124R2 4-pin Full Pitch MFP Phototransistor Output Optocoupler Fairchild Semiconductor
126 HMA124R2V 4-pin Full Pitch MFP Phototransistor Output Optocoupler Fairchild Semiconductor
127 K4R271669A Direct RDRAM Samsung Electronic
128 K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
129 K4R271669A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
130 K4R271669A-NB(M)CCG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
131 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
132 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
133 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
134 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
135 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
136 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
137 K4R271669B Direct RDRAM Samsung Electronic
138 K4R271669B Direct RDRAM� Data Sheet Samsung Electronic
139 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
140 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
141 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
142 K4R271669B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
143 K4R271669B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
144 K4R271669B-NB(M)CCK8 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
145 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
146 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
147 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
148 K4R271669D Direct RDRAM� Data Sheet Samsung Electronic
149 K4R271669D-T 128Mbit RDRAM(D-die) Samsung Electronic
150 K4R271669D-TCS8 128Mbit RDRAM(D-die) Samsung Electronic


Datasheets found :: 221
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



© 2024 - www Datasheet Catalog com