No. |
Part Name |
Description |
Manufacturer |
121 |
1N5232B |
500 milliwatts glass silicon zener diode, zener voltage 5.6V |
Motorola |
122 |
1N5232B |
Diode Zener Single 5.6V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
123 |
1N5232B-G |
Zener Diodes, PD=0.5Watts, VZ=5.6V |
Comchip Technology |
124 |
1N5232BTR |
5.6V, 0.5W Zener Diode |
Fairchild Semiconductor |
125 |
1N5232BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. Tolerance +-5%. |
Microsemi |
126 |
1N5232B_T26A |
5.6V, 0.5W Zener Diode |
Fairchild Semiconductor |
127 |
1N5232B_T50A |
5.6V, 0.5W Zener Diode |
Fairchild Semiconductor |
128 |
1N5232B_T50R |
5.6V, 0.5W Zener Diode |
Fairchild Semiconductor |
129 |
1N5232C |
5.6 V, 20 mA, zener diode |
Leshan Radio Company |
130 |
1N5232C |
Diode Zener Single 5.6V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
131 |
1N5232D |
5.6 V, 20 mA, zener diode |
Leshan Radio Company |
132 |
1N5232D |
Diode Zener Single 5.6V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
133 |
1N5232UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. |
Microsemi |
134 |
1N5251A |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
135 |
1N5251C |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
136 |
1N5251D |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
137 |
1N5339 |
Zener Diode 5.6V 5W |
Motorola |
138 |
1N5339 |
Diode Zener Single 5.6V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
139 |
1N5339A |
Zener Diode 5.6V 5W |
Motorola |
140 |
1N5339A |
Diode Zener Single 5.6V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
141 |
1N5339B |
Zener Diode 5.6V 5W |
Motorola |
142 |
1N5339B |
Diode Zener Single 5.6V 5% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
143 |
1N5339B |
Zener 5.6V 5W 5% |
ON Semiconductor |
144 |
1N5339BRL |
Zener 5.6V 5W 5% |
ON Semiconductor |
145 |
1N5339C |
Diode Zener Single 5.6V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
146 |
1N5339D |
Diode Zener Single 5.6V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
147 |
1N5524 |
Diode Zener Single 5.6V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
148 |
1N5524A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
149 |
1N5524A |
Diode Zener Single 5.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
150 |
1N5524B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
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