| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 122 |
2N5088TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 123 |
2N5088TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 124 |
2N5088TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 125 |
2N5088TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 126 |
2N5088_D81Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 127 |
2N5088_J61Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 128 |
2N5089 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 129 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 130 |
2N5089 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 131 |
2N5089 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 132 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 133 |
2N5089 |
Silicon NPN Transistor |
Motorola |
| 134 |
2N5089 |
Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 135 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 136 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 137 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 138 |
2N5089BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 139 |
2N5089RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 140 |
2N5089RLRE |
Small Signal Amplifier NPN |
ON Semiconductor |
| 141 |
2N5089TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 142 |
2N5089TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 143 |
2N5089TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 144 |
2N5089TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 145 |
2N5089_J18Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 146 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 147 |
2N508A |
Germanium PNP Transistor |
Motorola |
| 148 |
2N508A |
Trans GP BJT NPN 30V 0.1A 3-Pin TO-92 Ammo |
New Jersey Semiconductor |
| 149 |
2N5508 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
| 150 |
2N5508 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
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