| No. |
Part Name |
Description |
Manufacturer |
| 121 |
RSJ650N10 |
4V Drive Nch MOSFET |
ROHM |
| 122 |
RSJ650N10FRA |
4V Drive Nch MOSFET (Corresponds To AEC-Q101) |
ROHM |
| 123 |
RSJ650N10FRATL |
4V Drive Nch MOSFET (Corresponds To AEC-Q101) |
ROHM |
| 124 |
RSJ650N10TL |
4V Drive Nch MOSFET |
ROHM |
| 125 |
SD150N12MBC |
Standard recovery diode |
International Rectifier |
| 126 |
SD150N12MC |
Standard recovery diode |
International Rectifier |
| 127 |
SD150N12MSC |
Standard recovery diode |
International Rectifier |
| 128 |
SD150N12PBC |
Standard recovery diode |
International Rectifier |
| 129 |
SD150N12PC |
Standard recovery diode |
International Rectifier |
| 130 |
SD150N12PSC |
Standard recovery diode |
International Rectifier |
| 131 |
SD150N12PV |
1200V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 132 |
SD150N14MBC |
Standard recovery diode |
International Rectifier |
| 133 |
SD150N14MC |
Standard recovery diode |
International Rectifier |
| 134 |
SD150N14MSC |
Standard recovery diode |
International Rectifier |
| 135 |
SD150N14PBC |
Standard recovery diode |
International Rectifier |
| 136 |
SD150N14PC |
Standard recovery diode |
International Rectifier |
| 137 |
SD150N14PSC |
Standard recovery diode |
International Rectifier |
| 138 |
SD150N16MBV |
Standard recovery diode |
International Rectifier |
| 139 |
SD150N16MSV |
Standard recovery diode |
International Rectifier |
| 140 |
SD150N16MV |
Standard recovert diode |
International Rectifier |
| 141 |
SD150N16PBV |
Standard recovery diode |
International Rectifier |
| 142 |
SD150N16PSV |
Standard recovery diode |
International Rectifier |
| 143 |
SD150N16PV |
1600V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 144 |
SF150N11 |
Silicon alloy-diffused junction thyristor 150A 1000V |
TOSHIBA |
| 145 |
SF50N12 |
Silicon alloy-diffused junction thyristor 50A 1000V |
TOSHIBA |
| 146 |
STF150N10F7 |
N-channel 100 V, 0.0036 Ohm typ., 65 A STripFET F7 Power MOSFET in a TO-220FP package |
ST Microelectronics |
| 147 |
STH150N10F7-2 |
N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 148 |
STI150N10F7 |
N-channel 100 V, 0.0036 Ohm typ., 110 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in I2PAK package |
ST Microelectronics |
| 149 |
STP150N10F7 |
N-channel 100 V, 0.0036 Ohm typ., 110 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 150 |
STW50N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
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