No. |
Part Name |
Description |
Manufacturer |
121 |
ERJU08J512V |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
122 |
ERJUP6J512V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
123 |
ERJUP8J512V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
124 |
FM27C512V120 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
125 |
FM27C512V150 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
126 |
FM27C512V45L |
512K-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
127 |
FM27C512V55L |
512K-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
128 |
FM27C512V70L |
512K-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
129 |
FM27C512V90 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
130 |
FM27C512VE120 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
131 |
FM27C512VE150 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
132 |
FM27C512VE45L |
512K-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
133 |
FM27C512VE55L |
512K-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
134 |
ISPLSI5512VA |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
135 |
ISPLSI5512VA-100LB272 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
136 |
ISPLSI5512VA-100LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
137 |
ISPLSI5512VA-100LQ208 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
138 |
ISPLSI5512VA-110LB272 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
139 |
ISPLSI5512VA-110LB388 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
140 |
ISPLSI5512VA-110LQ208 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
141 |
ISPLSI5512VA-125LB272 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
142 |
ISPLSI5512VA-125LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
143 |
ISPLSI5512VA-125LQ208 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
144 |
ISPLSI5512VA-70LB272 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
145 |
ISPLSI5512VA-70LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
146 |
ISPLSI5512VA-70LB388I |
70 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
147 |
ISPLSI5512VA-70LQ208 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
148 |
ISPLSI5512VE-100LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
149 |
ISPLSI5512VE-100LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
150 |
ISPLSI5512VE-100LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
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