No. |
Part Name |
Description |
Manufacturer |
121 |
TC55257BFL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
122 |
TC55257BFL-85 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
123 |
TC55257BFL-85L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
124 |
TC55257BFTL |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
125 |
TC55257BFTL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
126 |
TC55257BFTL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
127 |
TC55257BFTL-85 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
128 |
TC55257BFTL-85L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
129 |
TC55257BPL |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
130 |
TC55257BPL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
131 |
TC55257BPL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
132 |
TC55257BPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
133 |
TC55257BSPL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
134 |
TC55257BSPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
135 |
TC55257BTRL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
136 |
TC55257BTRL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
137 |
TZM5257B |
Silicon Z-Diodes |
Vishay |
138 |
TZQ5257B |
Silicon Epitaxial Planar Z-Diodes |
Vishay |
139 |
ZMM5257B |
Zener Diodes |
Diodes |
140 |
ZMM5257B |
SURFACE MOUNT ZENER DIODES/MINI MELF |
Jinan Gude Electronic Device |
141 |
ZMM5257B |
500mW 5% mini-M.E.L.F ZENER DIODE |
Rectron Semiconductor |
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