No. |
Part Name |
Description |
Manufacturer |
121 |
HM5116405LS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
122 |
HM5116405LS-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
123 |
HM5117405LS-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
124 |
HM5117405LS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
125 |
HM5117405LS-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
126 |
HM5117805LS-5 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
127 |
HM5117805LS-6 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
128 |
HM5117805LS-7 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
129 |
LCA125LS |
Single Pole OptoMOS Relay |
Clare Inc |
130 |
LCA125LSTR |
Single Pole OptoMOS Relay |
Clare Inc |
131 |
LMX2335LSLB |
PLLatinum�� Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
132 |
LMX2335LSLBX |
PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
133 |
LNBH25LS |
LNB supply and control IC with step-up and IA?C interface |
ST Microelectronics |
134 |
LNBH25LSPQR |
LNB supply and control IC with step-up and IA?C interface |
ST Microelectronics |
135 |
MAH28155LS |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
136 |
MAQ28155LS |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
137 |
MAQ9264C95LS |
Radiation hard 8192 x 8 bit static RAM |
Dynex Semiconductor |
138 |
MAQ9264T95LS |
Radiation hard 8192 x 8 bit static RAM |
Dynex Semiconductor |
139 |
MAR28155LS |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
140 |
MAR9264C95LS |
Radiation hard 8192 x 8 bit static RAM |
Dynex Semiconductor |
141 |
MAR9264T95LS |
Radiation hard 8192 x 8 bit static RAM |
Dynex Semiconductor |
142 |
MAS28155LS |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
143 |
MAS9264C95LS |
Radiation hard 8192 x 8 bit static RAM |
Dynex Semiconductor |
144 |
MAS9264T95LS |
Radiation hard 8192 x 8 bit static RAM |
Dynex Semiconductor |
145 |
MAX6355LSUK-T |
Dual/Triple-Voltage ��P Supervisory Circuits |
MAXIM - Dallas Semiconductor |
146 |
MAX6355LSUT |
Dual/Triple-Voltage µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
147 |
MAX6355LSUT+ |
Dual/Triple-Voltage µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
148 |
MAX6355LSUT+T |
Dual/Triple-Voltage µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
149 |
MAX6355LSUT-T |
Dual/Triple-Voltage ��P Supervisory Circuits |
MAXIM - Dallas Semiconductor |
150 |
MRF19045LSR3 |
1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFET |
Freescale (Motorola) |
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