| No. |
Part Name |
Description |
Manufacturer |
| 121 |
SBP1660T |
60 V, 16 A, high current schottky rectifier |
General Instruments |
| 122 |
SBS1620T |
20 V, 16 A, schottky rectifier |
General Instruments |
| 123 |
SBS1635T |
35 V, 16 A, schottky rectifier |
General Instruments |
| 124 |
SBS1640T |
40 V, 16 A, schottky rectifier |
General Instruments |
| 125 |
SBS1645T |
45 V, 16 A, schottky rectifier |
General Instruments |
| 126 |
STB18N55M5 |
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 127 |
STD18N55M5 |
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in DPAK package |
ST Microelectronics |
| 128 |
STD7N52K3 |
N-channel 525 V, 0.72 Ohm, 6 A, DPAK SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 129 |
STF18N55M5 |
N-channel 550 V, 0.150 Ohm, 16 A, MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
| 130 |
STF7N52K3 |
N-channel 525 V, 0.72 Ohm, 6 A, TO-220FP SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 131 |
STGDL6NC60DI |
6 A, 600 V hyper fast IGBT with Ultrafast diode |
ST Microelectronics |
| 132 |
STGDL6NC60DIT4 |
6 A, 600 V hyper fast IGBT with Ultrafast diode |
ST Microelectronics |
| 133 |
STGF10NC60KD |
6 A, 600 V short-circuit rugged IGBT |
ST Microelectronics |
| 134 |
STGP10NB60SD |
16 A, 600 V low drop IGBT with soft and fast recovery diode |
ST Microelectronics |
| 135 |
STGPL6NC60DI |
6 A, 600 V hyper fast IGBT with Ultrafast diode |
ST Microelectronics |
| 136 |
STP18N55M5 |
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
| 137 |
STP7N52K3 |
N-channel 525 V, 0.72 Ohm, 6 A, TO-220 SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 138 |
STQ2LN60K3-AP |
N-channel 600 V, 4 Ohm typ., 0.6 A, SuperMESH3(TM) Power MOSFET in TO-92 package |
ST Microelectronics |
| 139 |
STS26N3LLH6 |
N-channel 30 V, 0.0038 Ohm, 26 A, SO-8 STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 140 |
STS6P3LLH6 |
P-channel 30 V, 0.024 Ohm typ., 6 A, STripFET(TM) VI DeepGATE Power MOSFET in a SO-8 package |
ST Microelectronics |
| 141 |
STU6NF10 |
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET |
ST Microelectronics |
| 142 |
STY112N65M5 |
N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247 |
ST Microelectronics |
| 143 |
TE600A |
50 V, 6 A, glass passivated junction plastic rectifier |
TRANSYS Electronics Limited |
| 144 |
TE600B |
100 V, 6 A, glass passivated junction plastic rectifier |
TRANSYS Electronics Limited |
| 145 |
TE600D |
200 V, 6 A, glass passivated junction plastic rectifier |
TRANSYS Electronics Limited |
| 146 |
TE600G |
400 V, 6 A, glass passivated junction plastic rectifier |
TRANSYS Electronics Limited |
| 147 |
TE600J |
600 V, 6 A, glass passivated junction plastic rectifier |
TRANSYS Electronics Limited |
| 148 |
TE600K |
800 V, 6 A, glass passivated junction plastic rectifier |
TRANSYS Electronics Limited |
| 149 |
TIC216D |
400 V, 6 A, silicon triac |
Texas Instruments |
| 150 |
TIC216M |
600 V, 6 A, silicon triac |
Texas Instruments |
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