| No. |
Part Name |
Description |
Manufacturer |
| 121 |
TPS61121PWR |
3.3-V 95% Efficient Boost Converter with 1.5-V 200-mA LDO for 1-Cell LiIon or Dual-Cell Applications |
Texas Instruments |
| 122 |
TPS61121RSAR |
3.3-V 95% Efficient Boost Converter with 1.5-V 200-mA LDO for 1-Cell LiIon or Dual-Cell Applications |
Texas Instruments |
| 123 |
TPS61121RSARG4 |
3.3-V 95% Efficient Boost Converter with 1.5-V 200-mA LDO for 1-Cell LiIon or Dual-Cell Applications 16-QFN -40 to 85 |
Texas Instruments |
| 124 |
TPS61122 |
3.6-V 95% Efficient Boost Converter with 3.3-V 200-mA LDO for 1-Cell LiIon or Dual-Cell Applications |
Texas Instruments |
| 125 |
TPS61122PW |
3.6-V 95% Efficient Boost Converter with 3.3-V 200-mA LDO for 1-Cell LiIon or Dual-Cell Applications |
Texas Instruments |
| 126 |
TPS61122PWG4 |
3.6-V 95% Efficient Boost Converter with 3.3-V 200-mA LDO for 1-Cell LiIon or Dual-Cell Applications 16-TSSOP -40 to 85 |
Texas Instruments |
| 127 |
TPS61122PWR |
3.6-V 95% Efficient Boost Converter with 3.3-V 200-mA LDO for 1-Cell LiIon or Dual-Cell Applications |
Texas Instruments |
| 128 |
UN6112 |
Silicon PNP epitaxial planer transistor |
Panasonic |
| 129 |
UNR6112 |
Silicon PNP epitaxial planer transistor with biult-in resistor |
Panasonic |
| 130 |
UPD23C256112A |
256M-bit((512+16)bytex32-pagex2048-block) Serial type Mask ROM |
NEC |
| 131 |
UPD23C256112AGY-XXX-MJH |
256M-bit((512+16)bytex32-pagex2048-block) Serial type Mask ROM |
NEC |
| 132 |
UPD23C256112AGY-XXX-MKH |
256M-bit((512+16)bytex32-pagex2048-block) Serial type Mask ROM |
NEC |
| 133 |
UPD4616112 |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM |
NEC |
| 134 |
UPD4616112-X |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM |
NEC |
| 135 |
UPD4616112F9-B85LX-BC2 |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM |
NEC |
| 136 |
UPD4616112F9-B95LX-BC2 |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM |
NEC |
| 137 |
UPD4616112F9-BC10-BC2 |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM |
NEC |
| 138 |
UPD4616112F9-BC80-BC2 |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM |
NEC |
| 139 |
UPD4616112F9-BC90-BC2 |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM |
NEC |
| 140 |
UT61128C64 |
128K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM |
UTRON Technology |
| 141 |
UT61128C64Q-5 |
128K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM |
UTRON Technology |
| 142 |
UT61128C64T-5 |
128K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM |
UTRON Technology |
| 143 |
VSC6112 |
Low jitter clock multiplier and distributor |
Vitesse Semiconductor Corporation |
| 144 |
XN06112 |
Composite Device - Composite Transistors |
Panasonic |
| 145 |
XN6112 |
Composite Device - Composite Transistors |
Panasonic |
| 146 |
XP06112 |
Composite Device - Composite Transistors |
Panasonic |
| 147 |
XP6112 |
Composite Device - Composite Transistors |
Panasonic |
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