| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MI-QC62K-MYY |
Military DC-DC Power Supplies |
Vicor Corporation |
| 122 |
NJL5162K |
PHOTO REFLECTOR |
New Japan Radio |
| 123 |
NJL5162K-F1 |
Photo reflector |
New Japan Radio |
| 124 |
NJL5162K-F10 |
Photo reflector |
New Japan Radio |
| 125 |
NJL5162K-F2 |
Photo reflector |
New Japan Radio |
| 126 |
NJL5162K-F3 |
Photo reflector |
New Japan Radio |
| 127 |
RTH22ES562K |
Sensistor |
Microsemi |
| 128 |
SDM862K |
16 Single Ended/8 Differential Input 12-BIT DATA ACQUISITION SYSTEMS |
Burr Brown |
| 129 |
SL5162KG |
Multistandard VHF and UHF Television Demodulator |
Zarlink Semiconductor |
| 130 |
SL5162KGMP1S |
Multistandard VHF and UHF Television Demodulator |
Zarlink Semiconductor |
| 131 |
SL5162KGMP1T |
Multistandard VHF and UHF Television Demodulator |
Zarlink Semiconductor |
| 132 |
STB2N62K3 |
N-channel 620 V, 3 Ohm, 2.2 A, D2PAK SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 133 |
STB4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 134 |
STB5N62K3 |
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 135 |
STB6N62K3 |
N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 136 |
STD2N62K3 |
N-channel 620 V, 3 Ohm typ., 2.2 A SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 137 |
STD3LN62K3 |
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET DPAK |
ST Microelectronics |
| 138 |
STD3N62K3 |
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 139 |
STD4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 140 |
STD5N62K3 |
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 141 |
STD6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in DPAK |
ST Microelectronics |
| 142 |
STEVAL-ILB009V1 |
2 x 28 W electronic ballast with active PFC based on the STD3N62K3 and STD845DN40 BJT devices |
ST Microelectronics |
| 143 |
STF10N62K3 |
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 144 |
STF17N62K3 |
N-channel 620 V, 0.28 Ohm, 15.5 A, TO-220FP SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 145 |
STF2N62K3 |
N-channel 620 V, 3 Ohm, 2.2 A, TO-220FP SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 146 |
STF3LN62K3 |
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET TO-220FP |
ST Microelectronics |
| 147 |
STF3N62K3 |
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 148 |
STF4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 149 |
STF5N62K3 |
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 150 |
STF6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| | | |
