| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N759B |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 122 |
1N759B |
ZENER DIODE |
New Jersey Semiconductor |
| 123 |
1N759C |
500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 124 |
1N759C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 125 |
1N759C |
Diode Zener Single 12V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 126 |
1N759C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 127 |
1N759C-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 128 |
1N759CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 129 |
1N759CUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 130 |
1N759D |
500mW, silicon zener diode. Zener voltage 12.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 131 |
1N759D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 132 |
1N759D |
Diode Zener Single 12V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 133 |
1N759D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 134 |
1N759D-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 135 |
1N759DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 136 |
1N759DUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 137 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 138 |
1SMA4759 |
Zener: |
Taiwan Semiconductor |
| 139 |
1SMA4759 |
62 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 140 |
1SMA4759 |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
| 141 |
2N1759 |
Germanium PNP Transistor |
Motorola |
| 142 |
2N1759 |
Germanium PNP Power Transistor, MS7 (spacesaver) Package |
Silicon Transistor Corporation |
| 143 |
2N2759 |
Silicon NPN Transistor |
Motorola |
| 144 |
2N2759 |
Trans GP BJT NPN 150V 0.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 145 |
2N3759 |
THYRISTOR |
Motorola |
| 146 |
2N5759 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 147 |
2N5759 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 148 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 149 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 150 |
2N759 |
Silicon NPN Transistor |
Motorola |
| | | |
